Modelling and design of a wideband 6–18 GHz GaN resistive mixer

Giacomo, V. Di; Thouvenin, Nicolas; Gaquière, Christophe; Santarelli, Alberto; Filicori, F.

doi:10.23919/eumc.2009.5295933

Cited by 5 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, GaN technology has been widely used for low noise amplifier (LNA) applications owing to its good low noise performance [1] and high input-power handling capability, which could eliminate the limiter before the LNA in the receiver. Nowadays, GaN has become a promising technology to realize a fully integrated transceiver chain in a single technology [2][3][4]. Recently, GaN technology is trending to replace gallium arsenide (GaAs) in transceiver front-end circuitry in the favor of high robustness at high frequency with large operating power.…”

Section: Introductionmentioning

confidence: 99%

A W-Band High Isolation Single-Balanced Mixer in Gan Hemt Technology

Peng¹,

Wang²,

Shao-bing³

et al. 2022

PIER Letters

View full text Add to dashboard Cite

A W-band high isolation single-balanced mixer using a 0.1-µm GaN high-electron mobility transistor process is proposed in this paper. The diode is biased near the threshold voltage to reduce drive level, and the needed LO power is only 3 dBm. Moreover, the reasonable diode layout and phase compensation structure are used in the proposed mixer to enhance the LO-to-RF isolation. The measured results of the proposed mixer demonstrate a single-sideband conversion loss of 9-10.6 dB and a LO-RF isolation of 40 dB from 75 to 110 GHz with 7 dBm LO power. Moreover, a DC-to-18 GHz IF bandwidth is achieved with the LO frequency fixed at 110 GHz. The 1 dB compression point of the proposed mixer is 11 dBm with 16 dBm LO power. The measurement results indicate that GaN mixer has great potential for W-band transceiver system applications.

show abstract

Section: Introductionmentioning

confidence: 99%