Modelling and measurement of bandgap behaviour in MWIR InAs/InAs(0.815)Sb(0.185) strained-layer superlattices

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew

doi:10.1117/12.2278733

Cited by 1 publication

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was found that when the width of the GaSb layer is increased by ≈3 ML, the absorption spectra are shifted to a longer wavelength of ≈0.3 μm. Letka et al [ 142 ] studied the effect of increasing the periods in the MWIR Ga‐free InAs/InAs 0.82 Sb 0.18 SL on the absorption coefficients while maintaining the same absorber thickness (0.7 μm). It was found that the absorption coefficients are slightly higher for SL with longer periods compared to shorter periods, specifically near the cutoff wavelengths of the detectors.…”

Section: Fundamental Materials Properties Of the Type‐ii Superlatticementioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

View full text Add to dashboard Cite

Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

show abstract

Section: Fundamental Materials Properties Of the Type‐ii Superlatticementioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

View full text Add to dashboard Cite

show abstract

Modelling and measurement of bandgap behaviour in MWIR InAs/InAs(0.815)Sb(0.185) strained-layer superlattices

Cited by 1 publication

References 6 publications

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Contact Info

Product

Resources

About