Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

Efficient CAD Tool for Noise Modeling of RF/Microwave Field Effect Transistors

“…For larger widths, the thermal noise of the gate increases due to the higher gate resistance while for smaller gate widths, the minimum noise figure increases as the capacitances do not scale proportionally with the gate width due to an offset in capacitance at gate width zero [2]. Therefore, we highlighted these effects of gate width on a transistor noise performance by simulating the minimum noise figure and the normalized equivalent noise admittance for three values of the gate width, e.g., 140, 280 and 560 μm (Fig.…”

“…Since most of the FETs are symmetrical, we can split their geometry into two identical parts. Figure 5 can be then decomposed into two equal parts of w/2 each (where w is the gate width) of respective scattering matrix [S (1) ] and [S (2) ]. Ports 13, 14 and 15 (the drain, the gate and the source) are terminated by the respective impedances Zd, Zg, and Zs, whose reflection coefficients can be expressed as …”

“…Widely used in modern wireless communication systems, active devices such as field-effect transistors (FETs) require up-todate models to achieve reliable circuit/system design especially in terms of noise performance since most of communication systems operate in noisy environments. [1]- [2]. Among existing FET modeling techniques, the full-wave modeling approach can be considered as the most reliable but is computationally expensive in terms of CPU time and memory [3]- [5].…”

Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

“…These results further support the case for using these novel devices for low frequency LNAs. A large geometry (800 m) device, built on XMBE#109, is currently used in the design and fabrication of a broadband monolithic LNA [5].…”

Advanced CAD tool for noise modeling of RF/microwave field effect transistors with large gate widths

“…Furthermore, to keep low-noise amplification over a wide frequency band, the transistor noise resistance R n must be substantially reduced to make the system insensitive to impedance matching [1]. Since this can be realized through large gate-width devices, the noise behavior of such particular devices at millimeter-wave frequencies should be efficiently modeled [2][3][4]. Targeting this class of FETs is also due to the fact that at mm-wave frequencies, the gate width to wavelength ratio is higher than 10 or 20% favoring large-gate-width transistors [5].…”