Modelling Challenges for Enabling High Performance Amplifiers in 5G/6G Applications

Abstract

Continuum mode amplifiers, which rely on harmonic tuning, have shown their potential for high efficiency over large bandwidths below 6 GHz and are strong candidates for even higher frequency applications of 5G networks. An accurate model of the transistor up to the third harmonic is a necessity for exploiting these amplifier classes. In this work, we present the considerations and challenges associated with modelling the device, and in particular the impact of extrinsic parasitics, for operation at high frequencies. We present a modified version of Dambrine's extraction procedure of intrinsic elements at sub-6 GHz frequencies, and demonstrate its utility up to 80 GHz by application in the extraction of a simulated GaN HEMT .

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Modeling Approaches

“…where we have used the sensitivity defined in (6). As in the (2L) case, equivalent wave impressed generators b (NL)…”

“…The foreseen transition to 6G communication systems (and beyond) calls for increased operation frequency and bandwidth along with reduced power dissipation and high efficiency, opening the way to the exploitation of new technologies and devices. Both Si nanotechnologies (e.g., CMOS and FinFETs [1][2][3][4]) and III-V-based technologies (GaAs and GaN PHEMTs [5][6][7]) have been continuously optimized for RF/microwave applications to cover the requirements of next generation communication systems, targeting either higher power density for the deployment of the wireless backbone [8], or extremely high operating frequencies to exploit their inherent wideband capability, or both. In analog high-frequency applications, though, the technological quality turns out to be the key for a successful deployment of microwave stages such as power amplifiers (PAs) or mixers [9].…”

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design

“…When power comes to play, as in power amplifiers (PAs) or mixers, the active device non-linear behavior must also be accurately reproduced. The statistical models available in literature (and in PDKs) are typically based on circuit equivalents [1,[9][10][11]. However, in the active devices, the variation of one electrical characteristic is typically due to the concurrent effect of many different process variations, thus the adoption of a circuit statistical model, where the direct connection between the process fluctuation and circuit performance variation is lost, hinders the possibility to distinguish between high-and low-sensitivity technological parameters.…”