Modelling domain switching of ferroelectric BaTiO3 integrated in silicon photonic waveguides

Mishra, Madhusudan; Das, N. R.; Melloni, Andrea; Morichetti, Francesco

doi:10.1016/j.optcom.2019.05.001

Cited by 7 publications

(10 citation statements)

References 38 publications

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“…Voltage dependence of coupling length appears through the variation of change in n of BTO with applied bias. The variation in n is simulated using a semi-empirical model reported in ref [29]. Using that study, the coercive field of BTO cladding is found to be 27.7 kV/cm, for a cladding thickness of t = 1000 nm.…”

Section: B Estimation Of Transverse Dimensionmentioning

confidence: 99%

A New Approach of Hetero-Cladding Using Ferroelectric BaTiO3 and SiO2 for Design of Compact Si Photonic Tunable Directional Coupler

Mishra¹,

Das²

2021

Preprint

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Abstract— The present work proposes a new approach of hetero-cladding for silicon photonic directional couplers and outlines its contributions towards realization of a compact, tunable and energy efficient directional coupler. The proposed hetero-cladding comprises ferroelectric BaTiO3 (BTO) and SiO2, to control the evanescent mode within the structure. The results show very small and identical coupling length for both TE and TM modes with reduced device cross-section, which promises for a huge reduction in the footprint of both conventional and programmable photonic integrated circuits (PICs). The proposed concept could also be utilized to design compact, low loss and energy efficient phase shifters and other types of couplers.

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Section: B Estimation Of Transverse Dimensionmentioning

confidence: 99%

A New Approach of Hetero-Cladding Using Ferroelectric BaTiO3 and SiO2 for Design of Compact Si Photonic Tunable Directional Coupler

Mishra¹,

Das²

2021

Preprint

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“…1(a)) in two biasing configurations, say "biasing-1" (to set n to ne) and "biasing-2" (to set n to no) (Fig. 1(c)) as reported earlier [28,36]. Initially n is taken as no.…”

Section: Schematic Structure With Proposed Designmentioning

confidence: 99%

“…[22][23][24][25][26]. It's refractive index (n) varies from 2.41 (no) to 2.36 (ne) tracing the orientation of its ferroelectric domains from in-plane (a-axis) to out-of-plane (c-axis) with application of suitable amount of electric field [27,28]. This huge modulation (i.e., Δn = 0.05) is fast (takes few tens of microseconds) and quite non-volatile in nature [29][30][31].…”

mentioning

confidence: 99%

A New Approach of Hetero-Cladding for Design of Compact Si Photonic Directional Coupler

Mishra¹,

Das²

2021

Preprint

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In this letter, we propose a new approach of hetero-cladding for realization of compact CMOS compatible silicon photonic directional couplers. The proposed hetero-cladding comprises ferroelectric BaTiO3 (BTO) and SiO2 to control the evanescent mode within the structure. The results show very small and identical coupling length for both TE and TM modes with reduced device cross-section, which promises for a huge reduction in the footprint of both conventional and programmable photonic integrated circuits. The concept can also be utilized to design compact, low loss and energy efficient phase shifters, other types of couplers, sensors etc.

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“…Ferroelectrics hold the promise to revolutionize low‐power logic, nonvolatile memories, actuators, sensors, and electro‐optics for waveguide devices. [ 1–24 ] These applications require suitable control and manipulation of ferroelectric domains and domain walls in ferroelectric thin films. Since 180° polarization switching was accomplished in 4.8 nm thick tetragonal BaTiO 3 thin films via mechanical manipulation, [ 25 ] considerable effort has been devoted to manipulating the polarization switching in ferroelectric thin films, for example, 3–5 nm thick PbZr 0.2 Ti 0.8 O 3 (001) film, 1.6–45 nm thick BaTiO 3 (001) film, 50 nm thick PbZr 0.1 Ti 0.9 O 3 (001) film, and 10 nm thick PbZr 0.48 Ti 0.52 O 3 (001) film, and flexoelectric effect is proposed to explain the mechanical manipulation of the domain and domain wall structures.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Hou

Chen

et al. 2021

Adv Funct Materials

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Ferroelectric materials feature a switchable spontaneous electric polarization and can enable low-power logic and nonvolatile memories. These applications require reliable and precise control of ferroelectric domains and domain walls in ferroelectric thin films. Mechanical manipulation is a promising route to engineer ferroelectric domains, but it has proved ineffective when going beyond a critical thickness. Here, multi-step 90° switching polarization reversal processes in ( 111)-oriented PbZr 0.2 Ti 0.8 O 3 thin films by applying mechanical forces along the direction parallel to the domain bands are reported. By probing the interrelationships between the relevant order parameters, coupled lattice distortion and piezoelectricity is revealed to facilitate domain switching from downward to upward in PbZr 0.2 Ti 0.8 O 3 , a mechanism that is supported by the evolution of domains and electrical performances at different temperatures and under varying pressures, respectively. The multistep domain reversal processes render PbZr 0.2 Ti 0.8 O 3 thin films an excellent candidate for multilevel data storage. The study's results have implications for the manipulation of polarization switching in ferroelectrics and open an avenue to domain reversal driven by mechanical loads for the development of next-generation ferroelectric devices.

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Modelling domain switching of ferroelectric BaTiO3 integrated in silicon photonic waveguides

Cited by 7 publications

References 38 publications

A New Approach of Hetero-Cladding Using Ferroelectric BaTiO3 and SiO2 for Design of Compact Si Photonic Tunable Directional Coupler

A New Approach of Hetero-Cladding Using Ferroelectric BaTiO3 and SiO2 for Design of Compact Si Photonic Tunable Directional Coupler

A New Approach of Hetero-Cladding for Design of Compact Si Photonic Directional Coupler

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

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