Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

High Growth Rate MOVPE

“…Gas injection flow speed in this type of reactor is extremely high for a large high-flow-speed reactor. As a result of the high flow speed, organometallics cannot reach the wafer surface within a reasonable distance from the gas injection nozzle without the suppression effect of the additional top flow of three-layer gas injection [17]. For high-growth-rate GaN, we have developed a production-scale multiwafer reactor (Taiyo Nippon Sanso Corp., SR23K) [18].…”

“…The reactor geometry is similar to the planetary reactor in Ref. [17]. We have employed a specifically designed three-flow gas injection with a flow speed of more than 1 m/s at the wafer center.…”

Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

“…The spatial luminescence wavelength uniformity is determined among others by the spatial uniformity of the In mole fraction in the quantum wells (QW)s. Spatial non-uniformities of the In mole fractions in the InGaN QWs can occur due to a variation of the In supply or the In incorporation into InGaN. On the supply side optimized flow conditions [7,8] and nitrogen as carriers gas [9] are commonly used to achieve a homogeneous composition over the wafer by the interplay of precursor depletion in the gas phase and averaging by wafer rotation in a planetary reactor [10]. The incorporation of In into InGaN on the other hand strongly depends on the temperature on the wafer surface [11].…”

Growth of GaN in a planetary MOCVD hotwall system

“…By changing the total flow and the mixture of the gases for each inlet, the transport by flow and also the diffusion can be influenced [4]. Due to a radial depletion of the group III precursors across the substrate, a depletion profile is developed with a characteristic maximum peak and an almost linear decline for the growth rate [5]. By changing the total flow, the position of the peak can be moved, also influencing the position and shape of the linear region.…”

“…By changing the total flow, the position of the peak can be moved, also influencing the position and shape of the linear region. A rotation of the substrate in the linear region results in homogeneous film deposition [5]. Diffusion of metal-organic precursor can be controlled by changing the gas species to a one with higher or lower molecular weight and therefore the slope and shape of the lin-ear region of the depletion profile can be influenced.…”