Modelling of n-type CdTe photoluminescence variation with polarization: a probe of the shift of semiconductor band edges

Gérard, I.; Iranzo-Marín, F.; Vigneron, Jackie; Etchéberry, Arnaud

doi:10.1016/0022-0728(95)04288-1

Cited by 8 publications

(5 citation statements)

References 42 publications

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“…One of them is the charge or discharge of surface states associated, for example, with adsorbent species. [36][37][38] During this phenomenon, a Fermi-level pinning is observed on the state distribution until its complete charge or discharge. The potential variation occurs essentially inside the Helmholtz double layer, and the potential drop inside the space-charge region stays almost constant in a depletion regime.…”

Section: H344mentioning

confidence: 99%

Growth of Anodic Oxides on n-InP Studied by Electrochemical Methods and Surface Analyses

Simon

Quach

Gonçalves

et al. 2007

J. Electrochem. Soc.

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Growth, formation, and stability of anodic oxides obtained on n-InP were investigated by coupling electrochemical methods and X-ray photoelectron spectroscopy ͑XPS͒ analyses. Photocurrent transients and capacitance measurements performed before and after the semiconductor surface oxidation exhibit new electrical interfacial properties, whereas XPS analysis gives access to chemical composition and estimation of oxide layer thickness. In this work, using a galvanostatic method, oxidation of the InP surface has been studied at pH 9 for two current densities: 0.2 and 12 mA cm −2 . Using transient photocurrent and Mott-Schottky behavior as in situ probes, we have pointed out several steps for the InP oxidation process, correlated to a gradual oxide coverage which is evidenced by XPS characterization. The current density chosen to perform the oxidation governs the resulting chemical composition, texture, and electrical properties of the oxide. For low current density, the anodic mechanism varies progressively from a pure semiconductor oxidation process to a solvent oxidation contribution. For high current density, this trend disappears whereas semiconductor oxidation continues to take place.

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Section: H344mentioning

confidence: 99%

Growth of Anodic Oxides on n-InP Studied by Electrochemical Methods and Surface Analyses

Simon

Quach

Gonçalves

et al. 2007

J. Electrochem. Soc.

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“…The PL experiments were performed using a He-Ne laser (λ = 633 nm) as excitation source. Luminescence at the front was collected using an optical setup of lenses, a Jobin Yvon HR320 monochromator and a 3378 Pacific Instrument photomultiplier tube (13). Morphology of the porous layers was characterized by SEM using a Jeol JSM 5800 (tungsten filament).…”

Section: Methodsmentioning

confidence: 99%

Electrochemical and Photo-Electrochemical Properties of Porous n-InP Layers

Santinacci¹,

Gonçalves²,

Etchéberry³

2007

ECS Trans.

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In this paper, we investigate the properties of porous structures anodically grown onto n-InP (100) in 1 M HCl. The relation between growth parameters and the pore morphology is firstly reported. In situ electrochemical characterizations show that the pore formation strongly influences the physical properties of n InP surfaces. Capacitance measurements reveal a modification of the electronic distribution but no variation of the flat band potential. Photocurrent spectra performed during the pore growth are strongly modified: uniform increase of the photocurrent followed by a decrease with narrowing of the spectrum is observed, red shift. Finally ex situ photoluminescence experiments carried out onto porous films show both a quantum size effect and a dead layer behavior.

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“…It results from the "dead layer model" [20,21] which neglects any radiative recombination within the space charge layer. G(w) varies as exp(-w(α+β)), α and β are the InP absorption coefficients of the incident excitation and the emitted luminescence.…”

Section: ( ) ( )mentioning

confidence: 99%

Photoluminescence of InP: an in situ probe for characterizing nanostructured PbSe electrodeposited on InP

Gérard

Froment

Cachet

et al. 2008

Phys. Status Solidi (c)

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PbSe electrodeposition was performed at fixed potential onto n‐InP in an EDTA electrolyte. Conditions are chosen to favour polycrystalline growth. The process was followed in situ by recording the photoluminescence (PL) of the substrate. Characteristic PL decays are observed which depend on the wavelengths of the excitations and are totally related to the PbSe growth. Estimation of the absorption coefficient at 930 nm, 850 nm and 633 nm points out a blue shift towards higher energies after comparison with data on PbSe single crystal. This suggests a quantum sizes effect which agrees to crystallite size evaluated to be in the range 10 to 20 nm by TEM observations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Modelling of n-type CdTe photoluminescence variation with polarization: a probe of the shift of semiconductor band edges

Cited by 8 publications

References 42 publications

Growth of Anodic Oxides on n-InP Studied by Electrochemical Methods and Surface Analyses

Growth of Anodic Oxides on n-InP Studied by Electrochemical Methods and Surface Analyses

Electrochemical and Photo-Electrochemical Properties of Porous n-InP Layers

Photoluminescence of InP: an in situ probe for characterizing nanostructured PbSe electrodeposited on InP

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