Modelling of proton irradiated GaN-based high-power white light-emitting diodes

Floriduz, Alessandro; Devine, James D.

doi:10.7567/jjap.57.080304

Cited by 25 publications

(18 citation statements)

References 38 publications

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“…As usual, the Ce 3+ stimulation spectrum has two distinct ranges at ∼330 and 450 nm owing to electron transfer from the base condition of Ce 3+ to another region of crystalline dividing the elements of the stimulated 5d condition of Ce 3+ ( 2 F5/2,7/2 → 5d 1 transformations). 2 In Figure 3, this applies the heated micro-YAG:Ce 3+ , with considerable range among two stimulation ranges. But in the two brand new samples, the bands appeared to considerably widen and lay on each other, which produced a constant wide band between ∼300 and 500 nm.…”

Section: Resultsmentioning

confidence: 99%

The application YAG:Ce3+@SiO2 phosphor for improving color deviation of phosphor-converted light-emitting diode

Le²

2022

IJEECS

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The yellow phosphor Y3Al5O12:Ce3+ (YAG:Ce3+), which sees its most popular use in white light-emitting diode (wLEDs), possess an optical spectrum that lacks the red element. The following article will propose a fresh solution for this problem, which involves adjusting the properties of Ce3+ spectrum by using exterior dye particles of ATTO-Rho101, possessing dramatic, wide absorption within the zone of green-yellow spectrum of Ce3+ emission and significant release of the red element. The globular YAG:Ce3+, which is micrometer and nanometer in size with significant dispersion (micro/nano-YAG:Ce3+) was created by employing an altered solvothermal technique. The YAG:Ce3+ produced by said technique, along with the heated micro-YAG:Ce3+ and commercial phosphors, were exteriorly covered with SiO2 and immersed in dye at the same time. Effective radiant transmission/reabsorption from Ce3+ within the YAG’s internal bowel to the dye particles of the exterior hull of SiO2, regardless of the phosphors’ size, was displayed in the YAG: Ce3+@SiO2+ dye powder amassed over the stimulation of the light of blue, which boosted the red element of it. The fluorescent microscope was considered an effective device intended for detecting the reabsorption event in grinded substances.

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Section: Resultsmentioning

confidence: 99%

The application YAG:Ce3+@SiO2 phosphor for improving color deviation of phosphor-converted light-emitting diode

Le²

2022

IJEECS

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“…At the same time, the electric field F in the space-charge region increases with the decrease of voltage. According to (2) and (3), the field-effect functions Γ n , p increase with the electric field F. According to (9), the carrier lifetimes τ n , p decrease with the increase of Γ n , p . In addition, the increase of defects caused by c radiation can reduce carrier lifetime also.…”

Section: International Journal Of Opticsmentioning

confidence: 97%

“…e radiation degradation modes in GaN LEDs have been investigated recently. A variety of radiation studies have been carried out [1][2][3][4][5][6][7], but there are few studies on the effects of c radiation on them [8,9]. Khanna et al [8] found that forward turn-on voltage was increased slightly, the reverse breakdown voltage was unchanged, and the light output intensity was decreased after GaN-based LEDs were radiated by c-rays.…”

Section: Introductionmentioning

confidence: 99%

Research on Degradation of GaN-Based Blue LED Caused by γ Radiation under Low Bias

Zhao

et al. 2020

International Journal of Optics

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GaN multiquantum-well blue light-emitting diodes (LEDs) were radiated with 60Co γ-rays for accumulated doses up to 2.5 Mrad (SiO2). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the low bias voltage. The current increased by 2.31 times, and the 1/f noise increased by 275.69 times after a dose of 2.5 Mrad (SiO2). Based on Hurkx’s trap-assisted tunneling model, the degradation of current was explained. γ radiation created defects in the space-charge region of LEDs. These defects as generation-recombination centers lead to the increase in the current. In addition, based on the quantum l/f noise theory, the degradation of 1/f noise might be also attributed to these defects, which caused an increase in the Hooge constant and a decrease in the carrier lifetimes. The current and 1/f noise degradations can be attributed to the same physical origin. Compared to the current, the 1/f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of GaN blue LEDs.

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“…With further development of space technology, GaN-based LEDs as a light source are more and more used in satellites, spacecrafts, accelerator tunnels, missiles, and so on. [102,103] It is important to understand the influence of space radiation on GaN-based space applications. It has been reported that both current-voltage and light output-current characteristics are degraded with increasing the proton dose, and the optical performance of the LEDs is more sensitive to the proton or electron irradiation than that of the corresponding electrical performances.…”

Section: Conclusion and Prospectsmentioning

confidence: 99%

Progress of Reliability and Failure Mechanisms for GaN‐Based Light‐Emitting Diodes

Zhao

Liu

2022

Physica Status Solidi (a)

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To achieve high reliable GaN-based LEDs with a controllable lifetime is one of the key issues for applications. In this review, an overview of reliability studies for different GaN-based LEDs, especially the research progress in our group based on our specially designed in situ multifunctional highly accelerated aging test system over the past few years, is presented. The contents not only cover highpower GaN-based LEDs, mid-power GaN-based LEDs, deep UV GaN-based LEDs, micro-LEDs, and phosphors under different operating conditions but also include the influence of point defects on the degradation, the correlation between luminous flux and color quality, and so on. Finally, prospects for reliability are discussed with the further development of the GaN-based devices.

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Modelling of proton irradiated GaN-based high-power white light-emitting diodes

Cited by 25 publications

References 38 publications

The application YAG:Ce3+@SiO2 phosphor for improving color deviation of phosphor-converted light-emitting diode

The application YAG:Ce3+@SiO2 phosphor for improving color deviation of phosphor-converted light-emitting diode

Research on Degradation of GaN-Based Blue LED Caused by γ Radiation under Low Bias

Progress of Reliability and Failure Mechanisms for GaN‐Based Light‐Emitting Diodes

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