Continuous wave ultraviolet laser irradiation at = 244 nm on the +z face of undoped and MgO doped congruent lithium niobate single crystals has been observed to inhibit ferroelectric domain inversion. The inhibition occurs directly beneath the illuminated regions, in a depth greater than 100 nm during subsequent electric field poling of the crystal. Domain inhibition was confirmed by both differential domain etching and piezoresponse force microscopy. This effect allows the formation of arbitrarily shaped domains in lithium niobate and forms the basis of a high spatial resolution microstructuring approach when followed by chemical etching. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2884185͔ Domain engineering 1,2 of lithium niobate ͑LN͒ is a subject of extensive research and a simple, cheap, and robust method of fabrication of well-defined periodic domaininverted structures on submicron scales is highly desirable. Spatial domain engineering is used for many optical processes in bulk crystals and waveguides and can also allow for the creation of both freestanding 3 and surface relief structures 4 through the differential etching characteristics of the polar z faces of the crystal. If achievable on the submicron scale, surface structuring through differential etching will allow the implementation of a range of interesting applications such as tunable photonic crystals, ridge waveguide lasers, and multifunctional micromachines.Previous work has shown that ultraviolet ͑UV͒ and visible laser light can either directly invert 5 or assist the domain inversion process in LN. [6][7][8][9] In this paper, however, a different effect is presented whereby illumination of the +z face with UV light at = 244 nm ͑with photon energy greater than the LN band gap͒ inhibits domain inversion in illuminated areas during subsequent electric field poling ͑EFP͒. Of major importance, the inhibited domains are not restricted in their shape or alignment with the crystal x or y axes, hence, arbitrarily shaped domains can be formed. Some initial results of this effect and its applicability in the creation of micro/nano structures in LN are presented.A beam from a frequency-doubled Ar-ion laser was focused to a spot size of ϳ2.5 m on the +z or −z face of either an undoped congruent or 5 mol % MgO-doped LN crystal. Positioning and exposure control of the crystal was achieved by a computer-controlled, three-axis stage system coupled with a mechanical shutter.For dynamic exposures, sets of parallel lines were drawn on the z faces of the crystals along the crystallographic x or y directions by moving the stages at speeds ranging from 0.05 to 0.3 mm s −1 . For static exposures, arrays of illuminated spots with identical exposure times, ranging from a few milliseconds to a few tens of seconds, were formed. The separation between the edges of adjacent illuminated spots in the arrays varied from 0 to 6 m which permitted us to verify if any proximity effect existed such as that observed in pulsed laser direct poling 5 where the closest approa...