2007
DOI: 10.1109/tns.2007.892119
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Models and Algorithmic Limits for an ECC-Based Approach to Hardening Sub-100-nm SRAMs

Abstract: Abstract-A mathematical bit error rate (BER) model for upsets in memories protected by error-correcting codes (ECCs) and scrubbing is derived. This model is compared with expected upset rates for sub-100-nm SRAM memories in space environments. Because sub-100-nm SRAM memory cells can be upset by a critical charge ( crit ) of 1.1 fC or less, they may exhibit significantly higher upset rates than those reported in earlier technologies. Because of this, single-bit-correcting ECCs may become impractical due to mem… Show more

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Cited by 89 publications
(30 citation statements)
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“…The same might not apply to the rest of bits within a real system. As reported by [22], the probability of not upsetting during a time t can be modeled by the 0th order Poisson distribution. Thus, it can be expressed as:…”
Section: Motivationmentioning
confidence: 99%
“…The same might not apply to the rest of bits within a real system. As reported by [22], the probability of not upsetting during a time t can be modeled by the 0th order Poisson distribution. Thus, it can be expressed as:…”
Section: Motivationmentioning
confidence: 99%
“…Bajura et al; represented the hardening approach to reduce the soft error rates [2]. Two approach of hardening is given which are critical circuit based hardening and system based hardening.…”
Section: Literature Surveymentioning
confidence: 99%
“…Due to consequence of higher integration densities, there is an increase in soft errors which points the need for more error correction capabilities [1], [3]. Therefore, it has become conventional to safeguard memories with the application of error correcting codes (ECC) like single-error-correcting (SEC) Hamming code, single-error-correcting double-error-detecting (SEC-DED) extended-Hamming, or SEC-DED Hsiao codes With multi-bit upsets (MBU) becoming a major contributor to soft errors.…”
Section: Introductionmentioning
confidence: 99%