Models for numerical device simulations of crystalline silicon solar cells—a review

Altermatt, Pietro P.

doi:10.1007/s10825-011-0367-6

Cited by 265 publications

(127 citation statements)

References 127 publications

(140 reference statements)

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“…The experimental high-injection value for C A differs from C n + C p measured at low injection levels 4,6 . We take the both injection regimes into account using an artificial value of 10 −30 cm 6 /s for C n .…”

Section: A Semiconductor Materials Modelcontrasting

confidence: 60%

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Varpula

Prunnila

2012

Journal of Applied Physics

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Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10 % at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15 %.

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Section: A Semiconductor Materials Modelcontrasting

confidence: 60%

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Varpula

Prunnila

2012

Journal of Applied Physics

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“…53. For Si, state-of-the-art models highlighted by Altermatt 54 and the latest Auger model 54 were applied in the simulation to accurately predict silicon characteristics. For SnO 2 , the key material parameters are determined from various papers [35][36][37][38][39][40] as listed in Table 1.…”

Section: Electrical Simulationsmentioning

confidence: 99%

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

Zheng

Lau

Mehrvarz

et al. 2018

Energy Environ. Sci.

202

186

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aMonolithic perovskite/silicon tandem solar cells show great promise for further efficiency enhancement for current silicon photovoltaic technology. In general, an interface (tunnelling or recombination) layer is usually required for electrical contact between the top and the bottom cells, which incurs higher fabrication costs and parasitic absorption. Most of the monolithic perovskite/Si tandem cells demonstrated use a hetero-junction silicon (Si) solar cell as the bottom cell, on small areas only. This work is the first to successfully integrate a low temperature processed (r150 1C) planar CH 3 NH 3 PbI 3 perovskite solar cell on a homo-junction silicon solar cell to achieve a monolithic tandem without the use of an additional interface layer on large areas (4 and 16 cm 2 ).Solution processed SnO 2 has been effective in providing dual functions in the monolithic tandem, serving as an ETL for the perovskite cell and as a recombination contact with the n-type silicon homo-junction solar cell that has a boron doped p-type (p++) front emitter. The SnO 2 /p++ Si interface is characterised in this work and the dominant transport mechanism is simulated using Sentaurus technology computer-aided design (TCAD) modelling. The champion device on 4 cm 2 achieves a power conversion efficiency (PCE) of 21.0% under reverse-scanning with a V OC of 1.68 V, a J SC of 16.1 mA cm À2 and a high FF of 78% yielding a steady-state efficiency of 20.5%. As our monolithic tandem device does not rely on the SnO 2 for lateral conduction, which is managed by the p++ emitter, up scaling to large areas becomes relatively straightforward. On a large area of 16 cm 2 , a reverse scan PCE of 17.6% and a steady-state PCE of 17.1% are achieved. To our knowledge, these are the most efficient perovskite/homo-junction-silicon tandem solar cells that are larger than 1 cm 2 . Most importantly, our results demonstrate for the first time that monolithic perovskite/silicon tandem solar cells can be achieved with excellent performance without the need for an additional interface layer. This work is relevant to the commercialisation of efficient large-area perovskite/homo-junction silicon tandem solar cells. Broader contextA simple approach for integrating a perovskite solar cell monolithically onto a Si solar cell is reported here. The first advantage of this approach is that it does not require additional fabrication of an additional interface layer between the perovskite and Si cell. The second advantage of this approach is that it is compatible with a homo-junction p-n Si solar cell, which is a common Si solar cell structure for commercial cells. The third advantage is that the entire sequence for the planar perovskite cell fabrication is done at low temperatures, minimising damage to the bottom Si solar cell. The fourth advantage is that the SnO 2 electron transport layer of the perovskite top cell also serves as a recombination contact with the silicon bottom cell. Finally, this monolithic tandem approach does not rely on the SnO 2 for lateral conducti...

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“…Schenk's model also accounts for BGN in the base substrate due to injected carriers, which can have a significant effect in devices and lifetime samples at high injection conditions [7]. The Schenk BGN model takes part in a collection of state-of-the-art models for (highly doped) c-Si which were chosen for use in cmd-PC1D 6.0 [3] as suggested by Altermatt et al [5] [8]. This set of models also includes Sproul and Green's model for the temperature-dependent intrinsic carrier density i,0 ( ) [9], which has been linearly scaled by a constant factor 0.9677 to match the latest value of 9.65 × 10 9 cm -3 at 300 K as reported by Altermatt et al [10], as well as the extensive and commonly used mobility model by Klaassen [11], [12].…”

Section: Fermi-dirac Statistics and Physical Models Introduced In Vermentioning

confidence: 99%

PC1Dmod 6.1 – state-of-the-art models in a well-known interface for improved simulation of Si solar cells

Haug

Greulich

Kimmerle

et al. 2015

Solar Energy Materials and Solar Cells

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In this paper, we present a new, updated version of the commonly used semiconductor device simulator PC1D named PC1Dmod 6.1. The new program is based on the previously published command line version cmd-PC1D 6.0, which has implemented several new options related to the device physics, but now uses an updated version of the original PC1D graphical user interface. The program thus provides the possibility for using Fermi-Dirac statistics and a selection of state-of-the-art models for crystalline silicon, including injection-dependent band gap narrowing, carrier mobility and Auger recombination, in a familiar setting.Version 6.1 also has implemented the recently published band gap narrowing model by Yan and Cuevas, which is based on empirical studies of a large selection of both n + and p + emitters, in addition to Schenk's model. It has also implemented the mobility model for compensated material by Schindler et al. Finally, the maximum number of nodes, time steps and wavelengths has been increased in order to reduce unnecessary constraints on simulations and external files.The results from the PC1Dmod 6.1 simulations have been compared with those of other simulation tools and with previously published data to verify the correct implementation of the new models. Emitter saturation currents calculated using PC1Dmod 6.1 showed an excellent agreement with those obtained using the emitter recombination calculator EDNA 2, and the new program was able to successfully reproduce previously published experimental data and previous implementations of the models. Both PC1Dmod 6.1 and the command line version cmd-PC1D 6.1 are open source software, and are freely available for download.

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Models for numerical device simulations of crystalline silicon solar cells—a review

Cited by 265 publications

References 127 publications

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency

PC1Dmod 6.1 – state-of-the-art models in a well-known interface for improved simulation of Si solar cells

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