Models for the oxidation of silicon

Lewis, E. A.; Irene, E. A.

doi:10.1116/1.574007

Cited by 52 publications

(4 citation statements)

References 33 publications

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“…One aspect of the variable oxide thickness variation is expected. It is known that the {100} silicon face oxidizes slowest in the linear-parabolic (15,16) and prelinear-parabolic regions (14,23), and accordingly we find that the {110} face oxide is significantly thicker by about 50% under the present conditions. On the other hand, the thin nature of the oxide above the {111} facets is quite surprising (see Fig.…”

Section: Discussionsupporting

confidence: 51%

“…It is not known if this is a systematic or random result. The extreme thinness of the oxide at the {111} facets is of greatest concern from a device point of view and is intriguing scientifically because, for the macroscopic wafers, the {111} plane oxidizes faster than {100}, which is well-known for thin oxide growth (14)(15)(16).…”

Section: H E Oxide On T H E Sidewalls Is Not Always Parallel-sided a ...mentioning

confidence: 99%

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A High Resolution Electron Microscopy Study of the Fine Structure in a Trench Capacitor

Sinclair

Kim

Shippou

et al. 1989

J. Electrochem. Soc.

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The structure of a thin (10 nm) oxide, grown in micron-sized trenches in silicon, has been studied by high resolution electron microscopy (HREM). The trenches were produced in {100} wafers by dry etching, and have {110} sidewalls and {100} bottom surfaces. Oxidation was carried out at 1!25~ by rapid thermal annealing in pure, dry 02 to produce a nominal 10 nm oxide on the top wafer surface. It is found that the oxide is largely smooth and continuous, with minimal Si-SiQ protrusions. However, the oxide thickness varies significantly around the trench, being thickest at the {110} sidewalls and thinnest in the inner, concave corners. In addition the latter are distinctly faceted on {111} and {311} planes. It is thought that crystallography plays an important role in the variation of trench structure after oxidation.

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Section: Discussionsupporting

confidence: 51%

Section: H E Oxide On T H E Sidewalls Is Not Always Parallel-sided a ...mentioning

confidence: 99%

A High Resolution Electron Microscopy Study of the Fine Structure in a Trench Capacitor

Sinclair

Kim

Shippou

et al. 1989

J. Electrochem. Soc.

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“…The oxidation kinetics of silicide films on the silicon substrate have been modeled using the parabolic rate law [12] and a linear-parabolic (LP) model [13,14]. The linear-parabolic model can be written as…”

Section: Oxidation Behavior Of Ni-si Coatingsmentioning

confidence: 99%

Structure and oxidation resistance of plasma sprayed Ni–Si coatings on carbon steel

Kawahara

Kurokawa

2006

Vacuum

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Abstract:Ni-Si coatings consisting of mainly NiSi 2 and NiSi were deposited on a carbon steel by air plasma spraying. Isothermal oxidation tests of the carbon steel substrates with the Ni-Si coatings at 500 ℃ to 800 ℃ have been carried out. The result indicated that a protective SiO 2 -based oxide scale was formed on the surface of the coatings after oxidation. On the other hand, during oxidation, phase transformation occurred among the NiSi 2 , NiSi and Ni 2 Si phases constructing the Ni-Si coatings. This was caused by the extraction of silicon from the silicides and the reformation of silicides at the silcide/Si-blocks interface. Above 700 ℃, the outward diffusion of iron and carbon became very fast and consequently decarburization happened at the coating/substrates interface, which induced the formation of pores in the substrates near the interface. In addition, grain boundary oxidation of Cr in the steel substrate observed above 700 ℃.

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“…Later work by Revesz and Evans (9), Deal (10), and Razouk et al (11) added information on steam oxidation of silicon. More recently, we have relatively lengthy broad discussions on models for the oxidation of silicon (12,13) showing the lack of concensus on both data and models.…”

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confidence: 99%

Steam Oxidation of Silicon

Taft

1989

J. Electrochem. Soc.

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Oxidation in steam was performed at temperatures 500°–1200°C on single‐crystal silicon of <111> and <100> orientation. A rapid initial oxidation was observed, this feature being similar to that seen for oxidation of silicon in dry oxygen. A rather extended region of linear growth was found at low temperatures. This tends to reinforce a model of linear‐parabolic growth. The activation energy of the linear rate constant derived from a linear‐parabolic analysis appears to be only 1.80 eV at temperatures above 800°C. At lower temperatures, the activation energy is 1.55 eV. The activation energy of the parabolic term is found to be, at lower temperatures, 1.17 for <111> and 1.33 for <100> silicon. At temperatures above 1050°C, the activation energy is 0.72 eV.

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Models for the oxidation of silicon

Cited by 52 publications

References 33 publications

A High Resolution Electron Microscopy Study of the Fine Structure in a Trench Capacitor

A High Resolution Electron Microscopy Study of the Fine Structure in a Trench Capacitor

Structure and oxidation resistance of plasma sprayed Ni–Si coatings on carbon steel

Steam Oxidation of Silicon

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