Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays

Cao, Zhihao; Liu, Lei; Tian, Jian; Zhangyang, Xingyue; wang, Zhidong; Cheng, Hongchang; Guo, Xin

doi:10.1016/j.optmat.2023.114632

Optical Materials

2024

DOI: 10.1016/j.optmat.2023.114632

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Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays

Zhihao Cao,

Lei Liu,

Jian Tian

et al.

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2024

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Cited by 2 publications

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Recent progress of indium-bearing group-III nitrides and devices: a review

He,

Li,

Xiao

et al. 2024

Opt Quant Electron

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Recent progress of indium-bearing group-III nitrides and devices: a review

He,

Li,

Xiao

et al. 2024

Opt Quant Electron

View full text Add to dashboard Cite

In_0.5Ga_0.5N Nanowires with Surface Adsorbed Nonmetallic Atoms for Photoelectric Devices: A First-Principles Investigation

Cao,

Liu,

Wang

et al. 2024

ACS Appl. Nano Mater.

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Based on first-principles, we calculate the effect of nonmetallic atoms (H, C, N, and O) adsorbing on the surface of In 0.5 Ga 0.5 N nanowires on their photoelectric properties. We first analyze the influence of In atom arrangements and nonmetallic atom adsorption positions in nanowires on system stability. When all In atoms are in the outermost layer of nanowires, In 0.5 Ga 0.5 N nanowires are the most stable. H, C, and O atoms are most stable when adsorbed at the T Ga position, while the N atom is more inclined to adsorb at the C position. On this basis, we conduct research on the effect of nonmetallic atomic adsorption on In 0.5 Ga 0.5 N nanowires. The results show that the work function of nanowires can be reduced effectively by the four kinds of atomic adsorption. N atom adsorption has the most obvious effect on the bandgap. This is mainly due to the fact that N atom adsorption creates a new impurity level near the Fermi level. The Fermi level will cross the conduction band to turn the In 0.5 Ga 0.5 N nanowire into an n-type semiconductor. The improvement of optical properties by nonmetallic atomic adsorption is relatively insignificant. However, due to the high absorption coefficient and low reflectivity over a wide wavelength range, as well as the low difficulty of electron escape, nanowires that adsorb atoms have enormous potential for applications in solar cells and vacuum optoelectronic devices that require a wide spectral response.

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Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays

Cited by 2 publications

References 30 publications

Recent progress of indium-bearing group-III nitrides and devices: a review

Recent progress of indium-bearing group-III nitrides and devices: a review

In_0.5Ga_0.5N Nanowires with Surface Adsorbed Nonmetallic Atoms for Photoelectric Devices: A First-Principles Investigation

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Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays

Cited by 2 publications

References 30 publications

Recent progress of indium-bearing group-III nitrides and devices: a review

Recent progress of indium-bearing group-III nitrides and devices: a review

In0.5Ga0.5N Nanowires with Surface Adsorbed Nonmetallic Atoms for Photoelectric Devices: A First-Principles Investigation

Contact Info

Product

Resources

About

In_0.5Ga_0.5N Nanowires with Surface Adsorbed Nonmetallic Atoms for Photoelectric Devices: A First-Principles Investigation