Modification of current-voltage characteristics of planar organic systems by nm-thick copper phthalocyanine or perylene dye interlayer

In applications, surface states and bulk doping concentration are important parameters of inorganic semiconductors, as they determine the bulk properties and substantially influence the properties of interfaces in devices, foremost the electron energy level alignment. In this work, we provide a qualitative model to describe the influence of surface state density and bulk donor concentration on the work function increase upon deposition of strong organic molecular acceptors onto the surface of n-doped inorganic semiconductors. This work function increase due to electron transfer to the molecular layer has two contributions: the formation of an interface dipole and a change of the near-surface space charge region inside the inorganic semiconductor, referred to as surface band bending. By using different surface preparation methods, we show how the surface state density limits the surface band bending change and enhances the interface dipole, both measured independently by photoelectron spectroscopy. In addition, we show that bulk donor concentration variation of the inorganic semiconductor has minor influence on the ratio of the two contributions to the work function change, at least for low to moderate donor concentrations up to 1019 cm−3.

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Impact of surface states and bulk doping level on hybrid inorganic/organic semiconductor interface energy levels

Schultz

Niederhausen

Schlesinger

et al. 2018

Journal of Applied Physics

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Modification of current-voltage characteristics of planar organic systems by nm-thick copper phthalocyanine or perylene dye interlayer

Cited by 1 publication

References 18 publications

Impact of surface states and bulk doping level on hybrid inorganic/organic semiconductor interface energy levels

Impact of surface states and bulk doping level on hybrid inorganic/organic semiconductor interface energy levels

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