Modification of electrical and optical properties of metal nitride thin films by hydrogen inclusion

Gas‐Pulsed CVD for Film Growth in the CuNiN System

“…The large vacancy in the 1 =2, 1 =2, 1 =2 position might be filled up with a metal atom, and an interstitial solid solution is formed. It has been previously shown that small amounts of metals e.g., Ag, Pd, Li, and Ti, [10][11][12][13][14] as well as non-metals such as H and O, [15][16][17][18][19][20][21] can be introduced into the Cu 3 N structure.…”

Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties

“…According to first-principle calculations, the incorporation of an excessive metal atom at the center of each unit cell brings about metallic ternary compounds Cu 3 NM (M¼Ni, Cu, Zn, Pd, Ag, and Cd) [9]. Experimental investigations have shown that lithium [10] and palladium [11] can be successfully inserted to the cell centers in bulk Cu 3 N; on the other hand, the effect of copper [12], titanium [13], hydrogen [14], and silver [15] dopants on the physical properties of Cu 3 NM thin films has also been reported by various researchers. Light doping with Ti atoms seems to raise the decomposition temperature of Cu 3 N films to 300-350 1C [13], while the electrical conductivity of hydrogen-implanted Cu 3 N films may increase by more than two orders of magnitude [14].…”

Phase stability and oxygen doping in the Cu–N–O system

“…[19]. Hayashi et al [20] doped hydrogen into Cu 3 N by ion implantation, studied the variation of electrical and optical properties and found that compared with nearly stoichiometric Cu 3 N the resistivity and the optical band gap decreased with hydrogen implantation. Oxygen doped Cu 3 N films (2.4 at% O) have been deposited by reactive magnetron sputtering using Cu, O 2 and N 2 as precursors [21].…”