Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba 0.6 Sr 0.4 TiO 3 interlayer

Impact of Y2O3 Nanosheets on the Microstructural Characteristics of Alq3 Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance

“…As observed in Figure a, the photodiodes possess a good rectification behavior (RR) of 86 and 55 for Alq 3 /p-Si and Alq 3 :Y 2 O 3 /p-Si, respectively. According to the TE theory, the current of the metal-semiconductor junction depends on both the voltage and temperature from the relation I = I normals 0.25em exp ( q false( V − italicIR false) nKT ) [ 1 − exp true( prefix− q ( V − IR s ) italicKT true) ] The reverse saturation current I s is given by I normals = italicAA * T 2 0.25em exp ( − q ϕ b kT ) Here, V , q , K , A , A *, and T are the applied voltage, electronic charge (1.6 × 10 –19 C), Boltzmann constant (1.38 × 10 –23 J K –1 ), effective rectifying area, Richardson’s constant (32 A cm –2 K –2 ) for p-type silicon, and the absolute temperature (300 Kelvin), respectively. , At low voltage, I s was calculated to have very low values, suggesting a little leakage current. The saturation current values were used to determine the barrier height ϕ b from the following equation ϕ normalb = italickT q 0.25em ln ( AA * T 2 I …”

“…10 −19 C), Boltzmann constant (1.38 × 10 −23 J K −1 ), effective rectifying area, Richardson's constant (32 A cm −2 K −2 ) for p-type silicon, and the absolute temperature (300 Kelvin), respectively 21,22. At low voltage, I s was calculated to have very low values, suggesting a little leakage current.…”

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

“…The value of ideality factor and barrier height determined from the forward bias I-V characteristics for dark and 100 mW/cm 2 is given in Table 1. The obtained ideality factor value is higher than unity due to series resistance, inhomogeneities of barrier height and interface states [40][41][42][43][44][45]. In addition, the series resistance affects the linear region of forward bias I-V curves and in turn, the linear region deviates from linearity.…”

The synthesis of MgO and MgO-graphene nanocomposite materials and their diode and photodiode applications

“…This might be caused by a rise in the negative charges at the interface of the MgO/n-Si diode, which would raise Φ b . These negative charges are most likely the result of electron traps that are concentrated near the semiconductor interface [32]. Additionally, the slight differences in the calculations performed using different methods can be explained by the fact that these methods are calculated by applying them to different regions of the I-V graph.…”