Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

Elahipanah, Hossein; Salemi, Arash; Zetterling, Carl-Mikael; Östling, Mikael

doi:10.4028/www.scientific.net/msf.858.978

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…2 shows a blocking characteristic of the 4H-SiC nchannel IGBT with an active area of 1.06 mm 2 at room temperature. The device has JTE edge termination [12][13][14] . During the measurement, the device is immersed in Flourinert oil.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

Yang¹,

Tao²,

Yang³

et al. 2018

J. Semicond.

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Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.

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Section: Resultsmentioning

confidence: 99%

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

Yang¹,

Tao²,

Yang³

et al. 2018

J. Semicond.

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show abstract

“…For example, the ESZ-JTE structure has besides the implant dose and implant depth, also the advantage of keeping the etch depth and length of the different regions as process parameters, which may further be used to optimize the device performance. H. Elahipanah et al, have recently, demonstrated that the breakdown voltage can potentially be increased by 20 % by optimizing the length of the termination etch zones, instead of using equally spaced etching lengths, at no extra/added cost [44]. Moreover, implementing a space-modulated pattern with etched trenches similar to [30], [37], [45] is yet another extended concept for further improvement of the ES/ESZ structural design and process.…”

Section: -50 Kv Class Sic Pin Diodes With Esz-jtementioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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“…Multi-step JTEs generally use uniform zone lengths [6], [7]. However, a descending zone length structure results in a more uniform electric field distribution and a lower peak electric field, leading to a higher breakdown voltage [8], [9]. Furthermore, high breakdown voltages require a large termination area.…”

Section: Introductionmentioning

confidence: 99%

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

Salemi

Elahipanah

Zetterling

et al. 2018

MSF

Self Cite

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Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

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Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

Cited by 7 publications

References 17 publications

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

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