Modification of FA0.85MA0.15Pb(I0.85Br0.15)3 Films by NH2-POSS

Abstract

The surface composition and morphology of FA0.85MA0.15Pb(I0.85Br0.15)3 films fabricated by the spin-coating method with different concentrations of NH2-POSS were investigated with atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and Fourier transform infrared spectroscopy (FTIR). It was found that the surface composition of the FA0.85MA0.15Pb(I0.85Br0.15)3 films was changed regularly through the interaction between NH2-POSS and the perovskite film. The corresponding surface morphological changes were also observed. When the concentration of NH2-POSS exceeded 10 mg/mL, a lot of cracks on the surface of the perovskite film were observed and the surface morphology was damaged. The surface composition and its distribution can be adjusted by changing the concentration of NH2-POSS and the proper concentration of NH2-POSS can substantially improve the quality of perovskite film.

Copper halide anion engineering for p-channel electrolyte-gated transistors with superior operational reliability

“…5b depict the possibility of elemental iodine or non-stoichiometric component formation after the cyclic test, indicating degradation of the undoped CuI semiconductor. 57,58 In contrast, EGTs with 20 mol% Br-doped CuI maintain the surface characteristics similar to as-coated films after the same consecutive scans (Fig. 4e).…”

Hybrid Perovskite-Based Materials Modified with Polyhedral Silsesquioxanes—Structure and Properties

“…Materials 2023, 16, x FOR PEER REVIEW solar cells protected by the POSS passivation layer were also more stable and o degradation of the PCE in an inert atmosphere of N2 was noted after 1000 h (Figu As was already mentioned, the presence of POSS is beneficial, but its quan be optimized because the inorganic cube acts also as an insulator. It was shown surface composition of the FA0.85MA0.15Pb(I0.85Br0.15)3 films and their morphology in a regular manner in the presence of POSS−NH2 as a result of its interaction perovskite film [55]. When the amount of silsesquioxane exceeded the optimum tration (10 mg/mL), the quality of the perovskite film surface morphology was mised by the formation of cracks (Figure 8).…”

“…As was already mentioned, the presence of POSS is beneficial, but its quantity must be optimized because the inorganic cube acts also as an insulator. It was shown that the surface composition of the FA 0.85 MA 0.15 Pb(I 0.85 Br 0.15 ) 3 films and their morphology changed in a regular manner in the presence of POSS-NH 2 as a result of its interaction with the perovskite film [55]. When the amount of silsesquioxane exceeded the optimum concentration (10 mg/mL), the quality of the perovskite film surface morphology was compromised by the formation of cracks (Figure 8).…”