Modification of free-volume defects in the GaS2–Ga2S3–CsCl glasses

Abstract

Modification of free-volume positron trapping defects in the GaS 2 -Ga 2 S 3 -CsCl chalcogenide glasses was studied using positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation methods. It is shown that the addition of CsCl to the main glass matrix leads to agglomeration of internal free-volume defects, which are di-or tri-atomic vacancies. However, an excessive amount of CsCl component causes a decrease in the size and content of these defects in the internal structure of the glass against the background of water adsorption in nanovoids with a radius of 0.3 nm. The obtained results are confirmed by normal and abnormal trends in the correlation of the S parameter, which characterizes the annihilation of positrons with low-momentum valence electrons and the W parameter, which corresponds to the annihilation of positrons with high-momentum core electrons.