2015
DOI: 10.1615/hightempmatproc.2015015827
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Modification of Hypereutectic Silumin Surface Layer by a High-Intensity Pulse Electron Beam

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“…The following electron-beam treatment parameters were used: the energy of accelerated electrons was 18 keV, the energy density of the electron beam was 40 J/cm 2 , the pulse repetition rate was 0.3 s -1 , the pulse duration was 200 µs and the number of pulses was 20. The result of the calculation of the temperature profile formed in the surface layer of silumin showed that the chosen mode of the treatment allows carrying out high-speed melting not only for Al-Si eutectics, but also for silicon crystals and intermetallic additions [9,10]. The research of element and phase structure, defects of the modified surface structure was carried out by optical and scanning electron microscopy and X-ray diffraction analysis.…”
Section: Methodsmentioning
confidence: 99%
“…The following electron-beam treatment parameters were used: the energy of accelerated electrons was 18 keV, the energy density of the electron beam was 40 J/cm 2 , the pulse repetition rate was 0.3 s -1 , the pulse duration was 200 µs and the number of pulses was 20. The result of the calculation of the temperature profile formed in the surface layer of silumin showed that the chosen mode of the treatment allows carrying out high-speed melting not only for Al-Si eutectics, but also for silicon crystals and intermetallic additions [9,10]. The research of element and phase structure, defects of the modified surface structure was carried out by optical and scanning electron microscopy and X-ray diffraction analysis.…”
Section: Methodsmentioning
confidence: 99%