2005
DOI: 10.1016/j.jmmm.2004.09.061
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Modification of microstructure and magnetic properties of Fe/Cr multilayers caused by ion irradiation

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Cited by 8 publications
(3 citation statements)
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“…In some cases, roughness was varied by changing parameters like substrate temperature, deposition pressure or layer thickness [28][29][30]. In other cases, GMR modifications were produced by irradiation of the Fe/Cr multilayers with energetic Xe + ions of 500 keV [31,32]. An increase in GMR when increasing the ion dose was observed.…”
Section: Introductionmentioning
confidence: 99%
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“…In some cases, roughness was varied by changing parameters like substrate temperature, deposition pressure or layer thickness [28][29][30]. In other cases, GMR modifications were produced by irradiation of the Fe/Cr multilayers with energetic Xe + ions of 500 keV [31,32]. An increase in GMR when increasing the ion dose was observed.…”
Section: Introductionmentioning
confidence: 99%
“…However, doses higher than 1×10 13 ions cm −2 led to a reduction of the GMR as more regions of the samples would become ferromagnetically coupled [31]. The formation of pinholes related to the increase of roughness with increasing ion dose, and alloying at the interface due to ion beam induced mixing, have been reported as mechanisms responsible for the degradation of both the GMR and the AF IEC [32].…”
Section: Introductionmentioning
confidence: 99%
“…6,7 In Fe/Cr multilayers, microstructure and magnetic properties can be modified by ion irradiation. 8 For NiFe/CoFe/Cu/CoFe/IrMn spin valves, on both continuous films and patterned elements, it is observed that Ga + ion irradiation results in dramatic decreases in giant magnetoresistivity (GMR) and exchange-bias field together with an increase in the film resistance. 9,10 Since ion irradiation can modify the microstructure and thus properties of magnetic films, it can be used for maskless patterning of magnetic elements by altering the magnetic properties of given regions instead of removing materials as in conventional patterning such as photolithography and electron-beam lithography.…”
Section: Introductionmentioning
confidence: 99%