Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Tsakalakos, Loucas; Sands, Timothy D.; Carleton, Eric; Yu, K. M.

doi:10.1063/1.1604963

Cited by 17 publications

(9 citation statements)

References 25 publications

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“…The inherent porosity in the hybrid sol-gel PZT film is thought to explain the lower laser fluence, 250 mJ/cm 2 , necessary for delamination of a PZT film from sapphire, compared to literature values of 400-700 mJ/cm 2 . [6][7][8] Even though this increase in laser energy density may be partially explained by small variations in wavelength of radiation used Fig. 6.…”

Section: Resultsmentioning

confidence: 96%

Laser-transfer processing of functional ceramic films

James

Comyn

Dorey

et al. 2010

Journal of the European Ceramic Society

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Section: Resultsmentioning

confidence: 96%

Laser-transfer processing of functional ceramic films

James

Comyn

Dorey

et al. 2010

Journal of the European Ceramic Society

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“…This value is near the middle of the range of fluences used previously for excimer laser transfer of ferroelectric films by direct absorption. For example, refs [5][6][7][8][9] report fluences over the range 250 to 700 mJ/cm 2 . The fluence levels required for excimer laser transfer with organic release layers are typically somewhat lower, in the range 100 to 300 mJ/cm 2 (see e.g.…”

Section: Resultsmentioning

confidence: 99%

“…it to lanthanum-modified PZT thin films produced by pulsed laser deposition on MgO (magnesium oxide) substrates [5,6]. The 1.4 m-thick films were first bonded to a stainless steel foil target using palladium-indium bonding.…”

Section: Introductionmentioning

confidence: 99%

“…The damaged layer can occupy a significant fraction of the total film thickness, in which case the ferroelectric and dielectric behaviour of the film as a whole will be compromised. Previous work has shown that the damage layer can be removed, and the electrical properties recovered, by ion milling [5,6] or by polishing [8]. However, the first of these approaches is too slow to apply over large areas, while the second may not be sufficiently controllable for thin films.…”

Section: Introductionmentioning

confidence: 99%

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Laser transfer of sol–gel ferroelectric thin films using an ITO release layer

Bansal

Hergert

Dou

et al. 2011

Microelectronic Engineering

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A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate. The thin film ferroelectric material is deposited on a fused silica growth substrate with a sacrificial release layer of ITO (indium tin oxide). Regions of the film that are to be transferred are then selectively metallised, and bonded to the target substrate. Separation from the growth substrate is achieved by laser ablation of the ITO release layer by a single pulse from a KrF excimer laser, with the laser light being incident through the growth substrate. The residual ITO on the transferred ferroelectric layer is electrically conducting, and may be suitable for incorporation into the final device, depending on the application. The new process has been demonstrated for 500 nm-thick layers of sol-gel PZT which were thermosonically bonded to a silicon target substrate prior to laser release. The transferred films show ferroelectric behaviour and have a slightly reduced permittivity compared to the as-deposited material.

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“…The ultrashort pulsed lasers (picosecond, femtosecond) are especially effective for precise processing by eliminating the heat‐affected zone to achieve ultrahigh resolution. Moreover, the peak temperatures at the interface can be regulated based on the laser intensities employed, which provides the possibility of distinct temperature‐dependent phenomena, such as heat‐induced local deformation at the irradiated interface, heat‐induce phase and microstructural modifications, and thermochemical decomposition of interface materials . Thus, the fluence should be carefully controlled to avoid an incomplete reaction (too low) or damage (too high).…”

Section: Basic Knowledge Of Laser–materials Interaction At Interfacementioning

confidence: 99%

Laser Transfer, Printing, and Assembly Techniques for Flexible Electronics

Bian

Zhou

Wan

et al. 2019

Adv Elect Materials

111

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materials and enable innovative applications that are hard to achieve with current microelectronics. Examples vary from biointegrated devices for clinical diagnosis and treatment, [11][12][13] to electronic skin (E-Skin), [14][15][16] energy harvesting/storage devices, [17][18][19][20][21] and sweat sensor, [22,23] to flexible display, [24,25] and to RFID tags, [26,27] etc.Two main kinds of microfabrication processes have been developed for flexible electronics, including the solutionprocessable methods and vacuum-based methods (lithographic patterning and undercut etching). [28] The former is naturally compatible with flexible substrates and can deposit and pattern functional materials in one single step. [29][30][31] They have fabricated various printed electronics with increasing performance, such as conductive metal wires, [32][33][34] thin film transistors (TFTs), [35][36][37] and piezoelectric devices. [38][39][40][41] However, the electronic performance is still limited by the properties of solution-processable functional materials and low resolution of printing techniques, with respect to standard microfabrication process. [42] On the other side, vacuum-based microfabrication techniques provide wellestablished routes to realize high-performance electronics, but generally incompatible with large-area, flexible (polymeric substrates). Ideally, high performance flexible electronics systems are usually fabricated by built-up process that begins with independent fabrication of high-modulus, fragile, chip-scale elements (e.g., IC chips, MEMS, sensors, and power sources) or flexible devices (e.g., flexible sensor, flexible display, and TFT array) on donor wafers, followed by being transferred onto flexible/stretchable substrates.The above manufacturing routes of flexible electronics can be concluded as the transfer of the materials, components, and devices from original fabricated/prepared substrates to flexible ones. The most significant built-in challenge in transferring is to control of interface status to accommodate to the disparate nature of the transferred objects from donor wafer/substrate. Distinctive assembly techniques based on stress-induced interface fracture have been invented to be adaptive to the diversity of material properties and geometric sizes that lead to tremendous differences in mechanical properties. For those conventional rigid electronic components like IC chips, they are transferred by standard single-ejector needle pick-and-place It is challenging to manufacture large-area, ultrathin, flexible/stretchable electronics on an industrial scale. Recent ground-breaking advances in the manufacture of flexible electronics are based on powerful laser processes. Laser irradiation at an internally absorbing interface through a transparent substrate will bring various physical changes and chemical reactions at the interface, accompanied by distinct phenomena. Numerous techniques derived from these phenomena with the unique ability to fabricate materials, structures, and devices on flexible subst...

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Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Cited by 17 publications

References 25 publications

Laser-transfer processing of functional ceramic films

Laser-transfer processing of functional ceramic films

Laser transfer of sol–gel ferroelectric thin films using an ITO release layer

Laser Transfer, Printing, and Assembly Techniques for Flexible Electronics

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