MODIFICATION OF PbS NOISE SPECTRA BY RADIATION

Abstract

The noise spectra of PbS pliotcconductive cells can be modified by optically escited carriers. Detailed wavelcngth studies a t CO? temperatures have shown that g-r noise can be obtained using light of the 2.4-micron region, and the l/f form with radiation of the 1.0-micron region. The effect is explained by assuming that minority carrier lifetimes in ICodalc Ektron detectors are very short. The l/f noise is o~i l y observed when optical carriers are produced very near the cell surface.I