Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Abstract

.65. Fg, 78.47.+p, 78.55.Et, 78.67.De, 81.15.Hi In present work, the influence of single monolayer CdTe film insertion on the luminescence and structural characteristics of CdZnTe/ZnTe quantum well (QW) was investigated by the photoluminescence (PL) and the high resolution X-ray diffraction (HRXRD) methods. The structures were grown by MBE on GaAs substrate and contained Cd 0.4 Zn 0.6 Te QW of 8 nm thickness with or without 1 monolayer CdTe film embedded in the middle of QW. The low temperature PL investigations showed that insertion of CdTe layer resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. Temperature dependencies of the QW PL spectra as well as time-resolved PL investigations indicated that these changes are caused by the increase of shallow localized state density and the decrease of deep one. The degradation of interface quality as well as the change of the QW composition were found by the HRXRD profiles.

On Optical Properties of CdTe/ZnTe Quantum Rings

“…Among them, the CdTe/ZnTe material system is interesting from the point of fabrication of QDs and QRs because the lattice mismatch between these two constituents is similar to that of the InAs/GaAs system, which is the most widely studied system in the context of QDs. [5][6][7] In addition, wide-bandgap CdTe QDs and QRs with higher excitonic binding energies are extremely advantageous for potential applications in optoelectronics devices operating in the green region of the spectrum. 8,9) Advances in the growth technology of II-VI semiconductors now permit the growth of high-quality CdTe/ZnTe QDs [8][9][10][11][12][13] and QRs.…”