Modification of the structure of diamond with MeV ion implantation

Bosia, Federico; Argiolas, N.; Bazzan, M.; Olivero, P.; Picollo, F.; Sordini, Andrea; Vannoni, Maurizio; Vittone, E.

doi:10.1016/j.diamond.2011.03.025

Cited by 26 publications

(19 citation statements)

References 22 publications

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“…Hence, we modeled the depth profiles of the material properties (density, mechanical parameters) as step-like functions varying between values relevant to diamond and graphite (ρ g = 2.1 g cm −3 , E g = 10 GPa, ν g = 0.31), as shown in figure 3, where the dimensions of the graphitic region are set by the extent of the critically damaged region. With the annealed sample, the obtained three-dimensional mass-density distribution and spatially varying mechanical properties are input into the FEM numerical simulations, to estimate the deformation and stress fields established in the sample [59].…”

Section: Numerical Simulationsmentioning

confidence: 99%

“…Note that while in principle these numbers should be known constants, in practice there is sufficient ambiguity in the literature as to their values, and hence treating them as parameters is appropriate. The other parameters, such as the mass-density and the mechanical properties of diamond, amorphized carbon and graphite, were taken from the accepted literature values [44,51,59].…”

Section: Numerical Simulationsmentioning

confidence: 99%

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Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

et al. 2013

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We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure-high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols. Gesellschaft large optical dipoles and, in the case of the negatively charged nitrogen-vacancy (NV − ) center, long-lived ground-state coherence [3].Although much of the interest in NV − -based QIP is centered on room-temperature processes and isolated centers, there is also considerable interest in applying ensemble QIP protocols to the optical transition of inhomogeneously broadened NV − centers. Indeed the dipole moment and transition frequency for NV − are comparable to that of rubidium, meaning that translation of protocols developed for vapor cells is natural. Protocols using ensembles were initially considered for the first NV − quantum computing [4,5] and optical quantum non-demolition experiments [6]. There have been observations of long-lived ground-state coherence [7], coherent population trapping [8], magnetometry [9] and magnetic coupling between NV − ensembles and superconducting circuits [10,11].Despite the interest in ensemble processing with NV − , there are major challenges to be overcome, which place NV − at a disadvantage when compared with atomic vapors. One of the largest problems is the inhomogeneous linewidth and the nature of this inhomogeneity. The inhomogeneous linewidth of the optical transitions in NV − typically varies with strain [12], implantation strategy [13,14] and electric field [15], leaving the job of controlling the linewidth as a major goal of NV − engineering. Coupled to this problem is that at room temperature, the linewidth appears to be dominated by spectral diffusion, although exceptional emitters with almost lifetime-limited emission can be discovered [16][17][18][19][20], and there are no reports of ensembles of purely homogeneously broadened NV − centers.Here we show a new approach to spectrally separating aligned subensembles of NV − . By engineering permanent strain fields into the diamond lattice through ion implantation, we demonstrate that it is possible to resolve the orientationally inequivalent NV − subensembles based upon their spectral properties. These results reveal new opportunities for the use of aligned, inhomogeneously broadened ensembles of NV − centers for QIP that is distinct from more traditional methods of applying external uniaxial strain to a lattice.In the study of defect-related optical transitions in cryst...

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Section: Numerical Simulationsmentioning

confidence: 99%

Section: Numerical Simulationsmentioning

confidence: 99%

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

et al. 2013

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“…FEM simulations were carried out using the "Structural mechanics" module in COMSOL Multiphysics ver. 4.3 44 : basically, the local density variation is modelled as a constrained volume expansion, similar to a thermal expansion problem, as reported in 31,32 . Material properties for calculations were taken from literature, as done in previous works 21,33,45 :d =1220…”

Section: D Modelling Of Implanted Layermentioning

confidence: 99%

“…where aC is the amorphous carbon density, F is the implantation fluence and α is an empirical parameter depending on the implantation conditions that accounts for the defect recombination probability 32,33 . The mass density variation profile corresponding to a 1. , as shown in Fig.…”

Section: D Modelling Of Non-uniformly Damaged Layers In Diamondmentioning

confidence: 99%

“…It is therefore possible to analyze this effect in order to infer the structural modifications occurring in ion-implanted diamond and the extent of the density variation. In previous studies a phenomenological model accounting for saturation in vacancy density was developed, and finiteelement (FEM) simulations were performed to compare numerical results with experimental surface swelling measurements [31][32][33] . The use of FEM modelling requires the use of specialized software and specific expertise in the field.…”

Section: Introductionmentioning

confidence: 99%

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An analytical model for the mechanical deformation of locally graphitized diamond

Piccardo

Bosia

Olivero

et al. 2014

Diamond and Related Materials

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We propose an analytical model to describe the mechanical deformation of single-crystal diamond following the local sub-superficial graphitization obtained by laser beams or MeV ion microbeam implantation. In this case, a local mass-density variation is generated at specific depths within the irradiated micrometric regions, which in turn leads to swelling effects and the development of corresponding mechanical stresses. Our model describes the constrained expansion of the locally damaged material and correctly predicts the surface deformation, as verified by comparing analytical results with experimental profilometry data and Finite Element simulations. The model can be adopted to easily evaluate the stress and strain fields in locally graphitized diamond in the design of microfabrication processes involving the use of focused ion/laser beams, for example to predict the potential formation of cracks, or to evaluate the influence of stress on the properties of opto-mechanical devices.

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