Modification thresholds in femtosecond laser processing of pure silica: review of dependencies on laser parameters [Invited]

Poumellec, Bertrand; Lancry, Matthieu; Chahid-Erraji, A.; Kazansky, Peter G.

doi:10.1364/ome.1.000766

Cited by 123 publications

(75 citation statements)

References 61 publications

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“…3. There are many important parameters which influence the femtosecond material processing, such as the the polarization (p), the laser light wavelength (λ), the pulse energy at the point of laser interaction with the transparent materials (E), the pulse duration (τ), the pulse repetition rate (f), the duration of the irradiation, and the numerical aperture (NA) of the focusing lens [45]. Therefore, a reasonable design of experiments must be based on these parameters and conditions in order to creat new structures and give rise to a specific functionality in transparent materials.…”

Section: Femtosecond Laser Systems and Parametersmentioning

confidence: 99%

“…Therefore, in the following section we give a brief review about the experimental conditions and parameters. This will be helpful for understanding the deterministic nature of the femtosecond laser-matter interaction, and for tailoring the local microstructure and functionalities of the target materials by properly adjusting those parameters [5,13,45].…”

Section: Paremeters Affecting the Femtosecond Laser-matter Interactionmentioning

confidence: 99%

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Femtosecond laser induced phenomena in transparent solid materials: Fundamentals and applications

Tan

Sharafudeen

Yue

et al. 2016

Progress in Materials Science

263

167

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Section: Femtosecond Laser Systems and Parametersmentioning

confidence: 99%

Section: Paremeters Affecting the Femtosecond Laser-matter Interactionmentioning

confidence: 99%

Femtosecond laser induced phenomena in transparent solid materials: Fundamentals and applications

Tan

Sharafudeen

Yue

et al. 2016

Progress in Materials Science

263

167

View full text Add to dashboard Cite

“…6 The interaction of ultrashort light pulses with materials is defined by multiple parameters, among which polarization plays a significant roles. 7 In particular, the formation of polarization dependent selfassembled periodic nanostructures is commonly observed, either within bulk [8][9][10][11] or on surface, 12,13 in the experiments of ultrafast laser direct writing. Another manifestation of the polarization is the anisotropy of near-field distribution produced by the interaction of linearly polarized beam with subwavelength structures, which can be revealed via imprinting in photosensitive polymer 14 or ablation of gold nanoparticles.…”

mentioning

confidence: 99%

Polarization sensitive anisotropic structuring of silicon by ultrashort light pulses

Zhang

Drevinskas

Beresna

et al. 2015

Applied Physics Letters

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Imprinting of anisotropic structures on the silicon surface by double pulse femtosecond laser irradiation is demonstrated. The origin of the polarization-induced anisotropy is explained in terms of interaction of linearly polarized second pulse with the wavelength-sized symmetric crater-shaped structure generated by the linearly polarized first pulse. A wavefront sensor is fabricated by imprinting an array of micro-craters. Polarization controlled anisotropy of the structures can be also explored for data storage applications.

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“…Today advanced femtosecond laser systems offer a myriad of material interactions in silica-based glasses, from surface machining, to annealing, forming, and refractive index changes (isotropic or anisotropic) writing. 1,2 Recently, other properties have also arisen, including chirality, 3,4 directional dependent writing, [3][4][5][6] glass decomposition, 7 nanocluster precipitation and shaping, 8 and elemental distribution with a subwavelength resolution. 7,9 No other technique has the potential to realize 3D multicomponent photonic devices fabricated in one single step within a variety of transparent materials.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

et al. 2011

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Lancry, M., Groothoff, N., Poumellec, B., Guizard, S., Fedorov, N., & Canning, J. (2011). Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser. Physical Review B: Condensed Matter, 84(24), 245103-1/8. DOI: 10.1103/PhysRevB.84.245103 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO 2 and Ge-doped SiO 2 . The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO 2 . The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 ± 5 fs) when compared to pure silica (155 ± 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica.

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Modification thresholds in femtosecond laser processing of pure silica: review of dependencies on laser parameters [Invited]

Cited by 123 publications

References 61 publications

Femtosecond laser induced phenomena in transparent solid materials: Fundamentals and applications

Femtosecond laser induced phenomena in transparent solid materials: Fundamentals and applications

Polarization sensitive anisotropic structuring of silicon by ultrashort light pulses

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

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