Modification to the central-cell correction of germanium acceptors

Abstract

In this paper, we report a correction to the model potential of the Ga acceptor in germanium, evidenced by high-magnetic-field photoconductivity measurements. We found that under high magnetic fields the chemical shift of the binding energy of Ga acceptors vanishes, contrary to the results given by the generally accepted theory. To fit our data, we found that the central-cell correction should contain a repulsive part (i.e., it must be bipolar), in contrast to the purely attractive screened point-charge potential widely used in the literature.

Вакансии ртути как двухвалентные акцепторы в структурах HgTe/Cd-=SUB=-x-=/SUB=-Hg-=SUB=-1-x-=/SUB=-Te с квантовыми ямами

“…Такой потенциал для дырок может быть как положительным (отталкиваю-щим), если кристаллическая решетка вокруг акцептора сжимается, так и отрицательным (притягивающим), если решетка растягивается [8]. К сжатию приводит встраи-вание в кристаллическую решетку атома с атомным номером, меньшим, чем замещаемый атом (например, если встраивается B на место атома Ge или Be на место Ga в GaAs), к растяжению кристаллической решетки приводит встраивания элемента с большим атомным номером (например, In в Ge или Zn на место Ga).…”

G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors

“…Hence we can split the magnetic moment operator (6) into four parts M z = M S + M 1 + M 2 + M 3 which have different kinematic structures…”

“…The hole binding in an acceptor level or in a quantum dot is a problem of a tremendous experimental interest. Theoretically shallow acceptor levels have been studied thoroughly, from the spherical approximation 2 to accounting the lattice corrections 3 , spin orbit split valence band 4 , and so-called central cell correction [4][5][6] . As the acceptor spectrum is quite sensitive to variations of Luttinger parameters, the experimental data have been used to determine the parameters 7 .…”

Resonance THz spectroscopy in high magnetic fields

“…Pulsed-field FEL facilities at the HZDR have been also successfully used to study the cyclotron resonance in strained p-InGaAs/GaAs [50] and Ge/Si 1−x Ge x [51], and to probe the photoconductivity of a gallium doped germanium crystals [52]. It is important to mention that the frequency range of the FEL spectrometer (1.2-75 THz) can be extended by use of conventional mm-and submm-wavelength radiation sources (including BWOs, MVNA, Gunn-diodes, etc.)…”