Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

“…Observing similar Bi surface effects as in the current experiment upon irradiation by swift Au ions, the authors of reference [25] also arrived at the same conclusion. This interpretation (predominance of electronic collision interaction mechanisms over nuclear collision ones in materials SHI irradiation) is, besides, supported by several other recent studies [44][45][46] (and references therein) conducted by different groups in the higher part of the target electronic stopping power regime. Such studies have investigated SHI irradiation-induced effects on: (i) the properties of semiconductor materials [44] pointing out the annealing (due to electronic collision processes) of defects (vacancies, interstitials) induced by elastic nuclear collisions, and (ii) Bi compound materials interpreting the observed strong induced surface effects by invoking the thermal spike model [45,46].…”

“…This interpretation (predominance of electronic collision interaction mechanisms over nuclear collision ones in materials SHI irradiation) is, besides, supported by several other recent studies [44][45][46] (and references therein) conducted by different groups in the higher part of the target electronic stopping power regime. Such studies have investigated SHI irradiation-induced effects on: (i) the properties of semiconductor materials [44] pointing out the annealing (due to electronic collision processes) of defects (vacancies, interstitials) induced by elastic nuclear collisions, and (ii) Bi compound materials interpreting the observed strong induced surface effects by invoking the thermal spike model [45,46]. Nevertheless, in order to definitely confirm this assumption and clarify whether or not electronic energy loss effects completely dominate over elastic nuclear collision processes, additional measurements of the energy dependence of the Bi sputtering yield within the (10-50) MeV energy range of the 84 Kr 15+ incident ions is highly desirable.…”

Enhanced photoelectrochemical activity of electro-synthesized CdS–Bi2S3 composite films grown with self-designed cross-linked structure

“…The solar conversion efficiency (%Á) and fill factor (%FF) as derived from the current-voltage curves using Eqs. (9) and (10) are summarized in Table 3:…”

“…The recent trend is to develop low cost tailor made solar energy materials with selected combinations of these chalcogenide compounds expected to produce the desired level of photoelectrochemical (PEC) properties such as high absorption of solar energy spectrum, compatible band gap energies, high life time of the charge carriers and stable photocurrent during discharge. Among the several other chalcogenides, CdS and Bi 2 S 3 have been studied extensively as individual binary components for thin film applications [8][9][10][11][12][13][14][15], however, studies on their composite film matrices are still rare. In view of the chemical/thermal stability of CdS and potential PEC character of Bi 2 S 3 , the CdS-Bi 2 S 3 composite is expected to be one of the most sensitive semiconductor materials for application in nonlinear optics as well as liquid-junction solar cells [16].…”

Electron beam induced modifications of bismuth sulphide (Bi2S3) thin films: Structural and optical properties

“…Karuppasamy and Subrahmanyam (2007) have reported the increase in grain size and decrease in band gap energy upon electron irradiation on ZnO thin films. Ahire et al, 2009 have studied the effect of swift heavy ion (SHI) irradiation with a fluence of 5 Â 10 12 ions/cm 2 on structural, optical and electrical properties of modified chemical bath deposited Bi 2 S 3 thin films. A red shift in the band gap energy and increase in grain size were observed after annealing and irradiation.…”