Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states

Reimbold, G.

doi:10.1109/t-ed.1984.21687

Cited by 305 publications

(126 citation statements)

References 26 publications

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“…The effective charge q*, which is used instead of the electron unit charge q, depends on V BG and will be discussed later. Basically, we consider q* = q at low gate voltage, that is, in the subthreshold region 19 (V BG < V FB = 12 V here), and q* < q above V FB . Figure 2b (1) (1) shows two examples of RTSs measured in our Si nanowire MOSFET.…”

Section: Resultsmentioning

confidence: 99%

“…More interestingly and importantly, the above-detailed analysis of q* and ϕ ij based on Coulomb repulsion provides us a better understanding of low-frequency noise in nanoscale MOSFETs 19 and especially its deviation from the well-known 1/f noise. We address this noise issue, which can have useful implications for design and simulation of nanoscale MOSFETs.…”

Section: Coulomb Repulsion Analysismentioning

confidence: 99%

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One-by-one trap activation in silicon nanowire transistors

et al. 2010

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Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (mosFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges becoming trapped and de-trapped. However, as a deviation from the well-known model of 1/f noise is observed for nanoscale mosFETs, a new model is required. Here, we report the observation of one-by-one trap activation controlled by the gate voltage in a nanowire mosFET and propose a new low-frequency-noise theory for nanoscale FETs. We show that the Coulomb repulsion between electronically charged trap sites prevents the activation of several traps simultaneously. This effect induces a noise reduction of more than one order of magnitude. It decreases when the electron density in the channel is increased due to the electrical screening of traps. These findings are technologically useful for any FET with a short and narrow channel.

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Section: Resultsmentioning

confidence: 99%

Section: Coulomb Repulsion Analysismentioning

confidence: 99%

One-by-one trap activation in silicon nanowire transistors

et al. 2010

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“…A model based on the number fluctuation model [43], [44], valid only for long-channel devices, implemented in circuit simulators is (42) where and are empirical parameters, different from those used in (41). This model is valid from weak inversion to strong inversion, provided that a coefficient which is the ratio of the fluctuations in carrier number to fluctuations in occupied trap number is used.…”

Section: ) Thermal Noise Modelsmentioning

confidence: 99%

Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels

Değerli

Lavernhe

Magnan

et al. 2000

IEEE Trans. Electron Devices

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Abstract-In this paper, analytical noise analysis of correlated double sampling (CDS) readout circuits used in CMOS active pixel image sensors is presented. Both low-frequency noise and thermal noise are considered. The results allow the computation of the output rms noise versus MOS transistor dimensions with the help of SPICE-based circuit simulators. The reset noise, the influence of floating diffusion capacitance on output noise and the detector charge-to-voltage conversion gain are also considered. Test circuits were fabricated using a standard 0.7 m CMOS process to validate the results. The analytical noise analysis in this paper emphasizes the computation of the output variance, and not the output noise spectrum, as more suitable to CDS operation. The theoretical results are compared with the experimental data.

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“…As this technique can be used in analog integrated circuits such as the current mirror and voltage controlled oscillator (VCO), the dependence of 1/f noise characteristics on body bias needs to be analyzed. However, there are few reports on the analysis of noise characteristics considering the body biases in the subthreshold and strong inversion regions [7,8].…”

Section: Introductionmentioning

confidence: 99%

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

Kwon¹,

Kwon²,

Kwak³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, S ID /I D 2 showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of S ID /I D 2 on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

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Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states

Cited by 305 publications

References 26 publications

One-by-one trap activation in silicon nanowire transistors

One-by-one trap activation in silicon nanowire transistors

Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

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