2012
DOI: 10.1007/s10773-012-1231-6
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Modified Homotopy Perturbation Method for Modeling Quantum Dots in the Quantum Clusters

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Cited by 5 publications
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“…(d) Researchers have already reported that doping iron oxide like materials having high dielectric constant can improve the efficiency of electronic/opto-electronic devices and sensors by improving the charge storage capacity, minimizing the leakage currents and the problem of quantum tunneling through dielectric barriers. 24,25 Hence, more insight can be obtained on improving the charge storage property of this PVP-IL material by doping g-Fe 2 O 3 like inorganics.…”
Section: Introductionmentioning
confidence: 99%
“…(d) Researchers have already reported that doping iron oxide like materials having high dielectric constant can improve the efficiency of electronic/opto-electronic devices and sensors by improving the charge storage capacity, minimizing the leakage currents and the problem of quantum tunneling through dielectric barriers. 24,25 Hence, more insight can be obtained on improving the charge storage property of this PVP-IL material by doping g-Fe 2 O 3 like inorganics.…”
Section: Introductionmentioning
confidence: 99%