“…(d) Researchers have already reported that doping iron oxide like materials having high dielectric constant can improve the efficiency of electronic/opto-electronic devices and sensors by improving the charge storage capacity, minimizing the leakage currents and the problem of quantum tunneling through dielectric barriers. 24,25 Hence, more insight can be obtained on improving the charge storage property of this PVP-IL material by doping g-Fe 2 O 3 like inorganics.…”
Facile one-step synthesis and material study of novel PVP-ion gel thin film and improvement of ionic conductivity, specific conductance and charge density of it by doping high-dielectric γ-Fe2O3 magnetic nanoparticles is presented here.
“…(d) Researchers have already reported that doping iron oxide like materials having high dielectric constant can improve the efficiency of electronic/opto-electronic devices and sensors by improving the charge storage capacity, minimizing the leakage currents and the problem of quantum tunneling through dielectric barriers. 24,25 Hence, more insight can be obtained on improving the charge storage property of this PVP-IL material by doping g-Fe 2 O 3 like inorganics.…”
Facile one-step synthesis and material study of novel PVP-ion gel thin film and improvement of ionic conductivity, specific conductance and charge density of it by doping high-dielectric γ-Fe2O3 magnetic nanoparticles is presented here.
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