Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Choi, Jung Woo; Kim, Jung Gyu; Jang, Byung Kyu; Ko, Sang Ki; Kyun, Myung Ok; Seo, Jung Doo; Ku, Kap Ryeol; Choi, Jeong Min; Lee, Won Jae

doi:10.4028/www.scientific.net/msf.963.18

Cited by 11 publications

(4 citation statements)

References 3 publications

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“…Unfortunately, greater convexity always implies greater internal stress. 20 Meanwhile, we obtained 150 mm crystal in the lab with a convex and smooth surface within 130 mm in diameter, but polycrystal in the surrounding 130–140 mm area after the rounding treatment ( Fig. 2b ), which shows the consistency between experiment and simulation in shapes and profiles.…”

Section: Resultssupporting

confidence: 54%

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Zhang

Fan²,

Li³

et al. 2022

RSC Adv.

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Section: Resultssupporting

confidence: 54%

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Zhang

Fan²,

Li³

et al. 2022

RSC Adv.

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“…Besides the required increase of boule size, the reduction of defects as well as bow and warp are important in order to compete with other materials [3]. A simple increase of the dimensions of the growth setup is not possible because increasing radial temperature differences have to be considered [4]. For the hot zone design, the reduction of thermal stress in the growing crystal while maintaining overall growth conditions with reasonable growth rates is crucial.…”

Section: Introductionmentioning

confidence: 99%

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

et al. 2019

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In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densification are evaluated. Laser flash measurement showed that the thermal properties of different regions of the source material change significantly before and after the growth run. The Si-depleted area at the bottom of the crucible is thermally insulating, while the residual SiC source showed increased thermal conductivity compared to the initially charged powder. Ex situ CT measurements revealed a needle-like structure with elongated pores causing anisotropic behavior for the heat conductivity. Models to assess the thermal conductivity are applied in order to calculate the changes in the temperature field in the crucible and the changes in growth kinetics are discussed.

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“…The control and optimization of process conditions is an important way to stabilize polytypes and reduce defect formation [ 16 , 17 , 18 ]. Research shows that SiC crystal growth is closely related to temperature and its gradient [ 19 ], where simulation methods can play an important role [ 20 , 21 ]. For a long time, the design of thermal field structures directly impacts crystal growth [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Zhang

Cai

et al. 2023

Materials

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As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

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Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Cited by 11 publications

References 3 publications

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

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