Modified methods for the calculation of real Schottky-diode parameters

Abstract

Abstract. Two methods are described to determine the Schottky-diode parameters from forward I -V characteristics. The first method includes the presentation of the standard I = f(V) function as V= f(/) and the determination of the factors Co, C1, C2 of this function that provides the calculation of the Schottky-diode ohmic component R, the barrier height ~o and the ideality factor n. The second method is based on a similar application of the special function proposed by Norde. These methods permit the automation of the measurement process. The possible dependence based on the experimental data between Schottky-diode quality and series resistance is shown. PACS: 73.30It is known that the I -V characteristic of a real Schottky diode can be described byif VD >> k T / q andwhere VD is the voltage across the metal-semiconductor interface in the Schottky diode, n is the ideality factor, A is the area of the Schottky diode and fl= q / k T . Since any real Schottky diode has a series resistance R which consists of the conductor elements, semiconductor substrate etc., the value of VD in (1) can be given bywhere V is the experimentally measured voltage in the Schottky-diode circuit and [ R is the voltage across the series resistance of the diode itself.The presence of the ohmic component R causes the appearance of the upper limit in the known voltage interval k T / q << V << I R , which is necessary for the correct application of ~o and n in the standard calculation method. This limit considerably reduces the current measurement area, where the I -V characteristic calculation is admissible, and decreases the accuracy of the calculated data.In [1] Norde proposed a special function for the Schottky-diode series-resistance calculationand it was shown that for an ideal Schottky diode (n = 1) the current value determination in the point corresponding to the minimum of this function permits to calculate the R value.In the case of a real Schottky diode, the problem of parameter determination is complicated in comparison with [1] because of the presence of a third unknown -the ideality factor. Several methods have been proposed for solving this problem in [2][3][4][5]. They are based on the Norde's function and are quite complicated.Three methods have been presented in [6] without using Norde's function for the determination of the series resistance R, ideality factor n and Schottky barrier height (0. Here the problem of Schottky-diode parameter determination is solved by means of the differential conductivity G= dI/dV, which requires the measurement steps as small as possible for the calculation and in this connection very high fidelity of the measurement devices. First methodThe method proposed below uses only (1) and is based on the same assumptions as in [6], However, this method is not critical to the measurement steps and less critical to the measurement device fidelity.For the realization of this method (1) should be presented taking into account (2) and (3) as follow: Equation (5) is said to be correct if the l = f ( V ) d...

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