Modified transfer matrix method for conducting interfaces

Khorasani, Sina; Rashidian, Bizhan

doi:10.1088/1464-4258/4/3/306

Cited by 56 publications

(45 citation statements)

References 30 publications

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“…The electromagnetic design of such layered structure could be done by combining the MTMM [9] with either a root search algorithm, or the our previously reported variational approach [35] for extraction of eigemodes. Details of calculations are fairly standard and dropped here for the sake of brevity.…”

Section: Resultsmentioning

confidence: 99%

“…More than a decade ago, we coined the term Conducting Interface to a family of optoelectronic devices, in which the electrooptic effect is maintained by a surface accumulation or depletion of electric charges [8][9][10][11][12][13][14]. While nowadays, graphene might be regarded as the ultimate conducting interface, our initial speculation [8] had been directed towards the inversion and depletion layers, surface states [11], and in particular, the quantum confined Two-Dimensional Electron Gas (2DEG) in III/V heterostructures.…”

Section: Index Terms-mentioning

confidence: 99%

“…While nowadays, graphene might be regarded as the ultimate conducting interface, our initial speculation [8] had been directed towards the inversion and depletion layers, surface states [11], and in particular, the quantum confined Two-Dimensional Electron Gas (2DEG) in III/V heterostructures. We developed a Modified Transfer Matrix Method (MTMM) to efficiently model the family of layered structures with conducting interfaces [9] and also deduce a coupled mode theory [13] of waveguides with conducting interfaces. More recently [14], the usefulness of conducting interfaces in modeling plasmonic modes of thin-film photonic crystals has been also shown.…”

Section: Index Terms-mentioning

confidence: 99%

“…It means the E-HH transitions are not excited in TM mode, and the system reduces to a two-level one. Moreover, it has been shown previously that the TM polarization interacts much weaker with the conducting interface [9,10] and hence, we need to assume that the designed optoelectronic device should operate with a TE polarized excitation. Now, the image of dipole moments on the polarization of a TE mode EM field take the form …”

Section: A Quantum Wellmentioning

confidence: 99%

“…We then formulate and derive the complex-valued and dispersive interface optical conductivity of the QW using quantum mechanical optical Bloch equations. Using the MTMM [9], we then proceed to an electromagnetic design of a semiconductor waveguide at the telecommunication wavelength of 1.55m, which is covered by the QW structure. The phase-retardation and absorption per unit length of the structure may be calculated and shown to be a strong function of the population of electron and hole states.…”

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confidence: 99%

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Optical Modulation by Conducting Interfaces

Karimi

Khorasani

2013

IEEE J. Quantum Electron.

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Abstract-We analyze the interaction of a propagating guided electromagnetic wave with a quantum well embedded in a dielectric slab waveguide. First, we design a quantum well based on InAlGaAs compounds with the transition energy of 0.8eV corresponding to a wavelength of 1.55m. By exploiting the envelope function approximation, we derive the eigenstates of electrons and holes and the transition dipole moments, through solution of the Luttinger Hamiltonian. Next, we calculate the electrical susceptibility of a threelevel quantum system (as a model for the two-dimensional electron gas trapped in the waveguide), by using phenomenological optical Bloch equations. We show that the two-dimensional electron gas behaves as a conducting interface, whose conductivity can be modified by controlling the populations of electrons and holes the energy levels. Finally, we design a slab waveguide in which a guided wave with the wavelength of 1.55m experiences a strong coupling to the conducting interface. We calculate the propagation constant of the wave in the waveguide subject to the conducting interface, by exploiting the modified transfer matrix method, and establish it linear dependence on the interface conductivity. By presenting a method for controlling the populations of electrons and holes, we design a compact optical modulator with an overall length of around 60m. Most of these applications are realized using physical phenomena such as electrooptic, thermooptic, or magnetooptic effects to allow control over the propagation and transmission of optical wavefronts. Modulation speeds in excess of 50GHz have so far been achieved in the basic Mach-Zhender Modulator (MZM) configuration. While MZM could utilize virtually any physical effect to allow optical modulation, normally the linear electrooptic effect in bulk semiconductors is used. High speed modulation is also possible using internal modulation schemes, for instance, by direct current modulation [6,7]. However, most wideband applications require external modulation of light. A common material which is widely used in this area is LiNbO 3 . But there is a drawback in using MZMs as external modulators is that they normally require very long propagation lengths of the order of a few millimeters. This requirement makes the MZMs highly inappropriate for integrated fabrication. There is also another problem with routine material platforms, which happen to be incompatible with the standard III/V compound semiconductor technology. Index Terms-Hence, one should look for an alternative physical phenomenon other than the above, which would enable strong modulation, ease of fabrication, compatibility with III/V optoelectronics integration, linear response, tunability, and possibility of modern quantum optical applications including quantum information processing and cavity quantum electrodynamics.More than a decade ago, we coined the term Conducting Interface to a family of optoelectronic devices, in which the electrooptic effect is maintained by a surface accumulation or deplet...

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Section: Resultsmentioning

confidence: 99%