2022
DOI: 10.1016/j.apsusc.2022.154849
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Modifying the optical emission of two-dimensional Ruddlesden-Popper perovskites by laser irradiation

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Cited by 3 publications
(3 citation statements)
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“…The layer number ( n ) determines the band gap, exciton binding energy, absorption/emission characteristics, and carrier lifetime of 2D perovskites. These properties facilitate the broad application of 2D lead halide perovskites in optoelectronic devices, including solar cells, photodetectors, , light-emitting diodes, and field effect transistors . Furthermore, introducing halide ion substitutions or mixtures offers an additional route to adjust the band gap of both 2D and 3D halide perovskite materials. However, due to the partial replacement of iodine (I) ions by bromine (Br) ions, the migration of ions in halide perovskites poses challenges to stabilizing the performance of perovskite-based optical devices. …”
Section: Introductionmentioning
confidence: 99%
“…The layer number ( n ) determines the band gap, exciton binding energy, absorption/emission characteristics, and carrier lifetime of 2D perovskites. These properties facilitate the broad application of 2D lead halide perovskites in optoelectronic devices, including solar cells, photodetectors, , light-emitting diodes, and field effect transistors . Furthermore, introducing halide ion substitutions or mixtures offers an additional route to adjust the band gap of both 2D and 3D halide perovskite materials. However, due to the partial replacement of iodine (I) ions by bromine (Br) ions, the migration of ions in halide perovskites poses challenges to stabilizing the performance of perovskite-based optical devices. …”
Section: Introductionmentioning
confidence: 99%
“…We think that large electric field enhancement achieved in the particle-on-film system is responsible for the ultralow threshold observed in this work. Previously, it was found that a SiO 2 microsphere placed on a perovskite film acts as a focusing lens, which provides a greatly enhanced electric field at the contact point between the microsphere and the film . In order to gain a deep insight into the underlying physical mechanism, we have calculated numerically the electric field distribution in the cross-section of the particle-on-film system formed on a Ag/SiO 2 substrate, which was excited by a plane wave, at the excitation wavelength (325 nm) (see Figure S8, Supporting Information).…”
mentioning
confidence: 99%
“…Previously, it was found that a SiO 2 microsphere placed on a perovskite film acts as a focusing lens, which provides a greatly enhanced electric field at the contact point between the microsphere and the film. 37 In order to gain a deep insight into the underlying physical mechanism, we have calculated numerically the electric field distribution in the cross-section of the particle-on-film system formed on a Ag/SiO 2 substrate, which was excited by a plane wave, at the excitation wavelength (325 nm) (see Figure S8, Supporting Information). It was found that the laser beam can be tightly focused onto the SiN x /CsPbBr 3 composite film by the SiO 2 microsphere.…”
mentioning
confidence: 99%