Modifying the solar spectrum to enhance silicon solar cell efficiency—An overview of available materials

Strümpel, C.; Cann, Maria; Beaucarne, G.; Arkhipov, V. I.; Slaoui, A.; Švrček, Vladimír; Del, Cañizo C.; Tobias, Irwin

doi:10.1016/j.solmat.2006.09.003

Cited by 544 publications

(319 citation statements)

References 104 publications

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“…In fact, the most efficient upconversion processes generally occur in host materials with low phonon energies such as NaY 0.8 F 4 . [4][5][6][7] Nonetheless, in photovoltaics, technology based on UC processes to harvest sub-bandgap photons has not yet advanced to the point where such devices are practical. Fundamental issues, such as the typically small absorption cross-section of Er ($10 À20 cm À2 ) 27,49,50 and the strong dependence of the UC efficiency on the light intensity, 4,13,39 complicate a straightforward solution based on UC for significantly increasing Si solar cell efficiencies.…”

Section: Discussionmentioning

confidence: 99%

“…3 While such upconversion processes represent a loss mechanism for some optoelectronic applications, they are being considered for the enhancement of the energy conversion efficiency of future silicon solar cells. [4][5][6][7] The idea is that by adding an upconversion material to the rear side of a silicon solar cell, a fraction of the sub-bandgap photons (E g < 1.1 eV) that would otherwise be transmitted through the device can now be utilized to create electron-hole pairs in the solar cell. The Er 3þ photoluminescence (PL) and upconversion luminescence depend strongly on the Er concentration in the film.…”

Section: Introductionmentioning

confidence: 99%

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Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

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Atomic layer deposition was used to deposit amorphous Er-doped Al2O3 films (0.9–6.2 at. % Er) on Si(100). The Er3+ photoluminescence (PL), Er3+ upconversion luminescence, as well as the Si PL and associated surface passivation properties of the films were studied and related to the structural change of the material during annealing. The PL signals from Er3+ and Si were strongly dependent on the annealing temperature (T = 450–1000 °C), but not directly influenced by the transition from an amorphous to a crystalline phase at T > 900 °C. For T > 650 °C, broad Er3+ PL centered at 1.54 μm (4I13/2) with a full width at half maximum of 55 nm was observed under excitation of 532 nm light. The PL signal reached a maximum for Er concentrations in the range of 2–3 at. %. Multiple photon upconversion luminescence was detected at 660 nm (4F9/2), 810 nm (4I9/2), and 980 nm (4I11/2), under excitation of 1480 nm light. The optical activation of Er3+ was related to the removal of quenching impurities, such as OH (3 at. % H present initially) as also indicated by thermal effusion experiments. In contrast to the Er3+ PL signal, the Si luminescence, and consequently the Si surface passivation, decreased for increasing annealing temperatures. This trade-off between surface passivation quality and Er3+ PL can be attributed to an opposite correlation with the decreasing hydrogen content in the films during thermal treatment.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

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“…Similar multicomponent materials based on doped tellurite glasses had shown promising applications for amorphous solar cells concentrators [8][9][10], taking advantage of the up-and down-conversion processes and incorporating layers above (for down-conversion and photoluminescence) or below (for upconversion) to improve the energy efficiencies [9]. In this sense, several RE 3+ combinations such as Er 3+ /Yb 3+ , Ce 3+ /Er 3+ /Yb 3+ and Yb 3+ /Tb 3+ have been tested in order to increase the quantum efficiency of conventional solar cells [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Nd3+-doped TeO2–PbF2–AlF3 glasses for laser applications

et al. 2016

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a b s t r a c tA study of the optical properties of Nd 3+ ion in TeO 2 -PbF 2 -AlF 3 glasses has been carried out for different Nd 3+ concentrations. Based on the Judd-Ofelt theory, intensity parameters and radiative properties were determined from the absorption spectra. Focusing on the suitability of this host for laser applications, the spectroscopic quality factor v was obtained with a value of 1.07, a value of the order of other compositions proposed as laser hosts. For the most intense emission corresponding with the 4 F 3/2 ? 4 I 11/2 transition (1.06 lm), the absorption and emission and have been calculated with values of 1.20 Â 10 À20 cm 2 , 2.08 Â 10 À20 cm 2 . A positive value for the gain cross-sections has been found for a population inversion factor c of 0.4 in the spectral range from 1060 to 1110 nm. All these results suggest the potentially use of this system as a laser host.

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“…[1][2][3] Potential applications of these materials include biosensors, [4][5][6] colour displays [7][8][9] and solar cells. [10][11][12][13] One of the first historical applications of upconverting materials was in the area of solid-state compact lasers 14 emitting in the visible, with important applications in the areas of data storage, reprographics, and underwater optical communications. Early upconversion lasers based on rareearth ions only operated at low temperatures (below 100K), making the systems impractical.…”

Section: Introductionmentioning

confidence: 99%

Efficient oxide phosphors for light upconversion; green emission from Yb³⁺and Ho³⁺co-doped Ln₂BaZnO₅(Ln = Y, Gd)

et al. 2011

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The optical properties of Yb 3+ and Ho 3+ co-doped Y 2 BaZnO 5 , synthesized by solid-state reactions, are investigated in detail. Under 977 nm excitation (~2.5 W/cm 2 ), bright green upconversion emission is observed. Concentration dependence studies at room temperature show that relatively high infrared to visible upconversion efficiencies are obtained with values up to ~2.6%. The results of power dependence studies and temperature dependent lifetime measurements allow us to determine the dominant upconversion mechanisms in Yb 3+ : Ho 3+ co-doped Y 2 BaZnO 5 oxides. The materials presented in this paper constitute new and efficient upconversion phosphors which may find utility in a variety of applications.

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Modifying the solar spectrum to enhance silicon solar cell efficiency—An overview of available materials

Cited by 544 publications

References 104 publications

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Nd3+-doped TeO2–PbF2–AlF3 glasses for laser applications

Efficient oxide phosphors for light upconversion; green emission from Yb³⁺and Ho³⁺co-doped Ln₂BaZnO₅(Ln = Y, Gd)

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Modifying the solar spectrum to enhance silicon solar cell efficiency—An overview of available materials

Cited by 544 publications

References 104 publications

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Nd3+-doped TeO2–PbF2–AlF3 glasses for laser applications

Efficient oxide phosphors for light upconversion; green emission from Yb3+and Ho3+co-doped Ln2BaZnO5(Ln = Y, Gd)

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Product

Resources

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Efficient oxide phosphors for light upconversion; green emission from Yb³⁺and Ho³⁺co-doped Ln₂BaZnO₅(Ln = Y, Gd)