Modular 50-kV IGBT Switch for Pulsed-Power Applications

Zorngiebel, Volker; Hecquard, Mickaël; Spahn, E.; Welleman, A.; Scharnholz, Sigo

doi:10.1109/tps.2010.2068061

Cited by 21 publications

(7 citation statements)

References 14 publications

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“…The switching board, which is composed of 12 switches in series connection, is triggered by their floating gate drive circuits. The floating gate driver includes a 1:n toroidal transformer and a pulse shaping circuit [3], [4]. The operation of the HVS system can be illustrated by the simulation results in Fig.…”

Section: Principle Operation Of a Hvs Drivermentioning

confidence: 99%

Short-circuit Protection for the Series-Connected Switches in High Voltage Applications

Vo¹,

Choi²,

Lee³

2016

Journal of Power Electronics

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This paper presents the development of a short-circuit protection mechanism on a high voltage switch (HVS) board which is built by a series connection of semiconductor switches. The HVS board is able to quickly detect and limit the peak fault current before the signal board triggers off a gate signal. Voltage clamping techniques are used to safely turn off the short-circuit current and to prevent overvoltage of the series-connected switches. The selection method of the main devices and the development of the HVS board are described in detail. Experimental results have demonstrated that the HVS board is capable of withstanding a short-circuit current at a rated voltage of 10kV without a di/dt slowing down inductor. The corresponding short-circuit current is restricted to 125 A within 100 ns and can safely turn off within 120 ns.

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Section: Principle Operation Of a Hvs Drivermentioning

confidence: 99%

Short-circuit Protection for the Series-Connected Switches in High Voltage Applications

Vo¹,

Choi²,

Lee³

2016

Journal of Power Electronics

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“…1. Since IGBTs of 600 V to 6.5 kV are commercially available [36]- [39], single IGBT or a series combination of two IGBTs is ample to meet the hold-off requirement in low and medium power applications. The average output voltage of buck converter, which is a function of duty cycle and input voltage, is given as The duty cycle (δ) is varied in a m-level positive piecewise constant (PWC) sinusoidal fashion, so that the V C will naturally be a unidirectional m-level PWC sine wave that is made into a n-level AC voltage by a synchronized H-bridge.…”

Section: Circuit Description and Operation Of Dda-mlimentioning

confidence: 99%

Embedded Control of n-Level DC–DC–AC Inverter

Reddy

Anish

Selvan

et al. 2015

IEEE Trans. Power Electron.

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A generalized multilevel inverter (MLI) with front-end DC-DC conversion stage followed by a synchronized H-bridge is presented. By using this configuration along with the proposed embedded control, any desired number of levels (n) in the output voltage can be produced. The DC-DC conversion stage employs an asynchronous buck converter. The duty cycle of DC-DC converter is varied in the form of m-level piecewise constant (PWC) unidirectional sine wave to produce a similar output voltage across the DC-link capacitor. The unidirectional PWC voltage is made into n-level AC voltage, where n = (2m-1), by the synchronized H-bridge. Hence, it is named as DC-DC-AC Multilevel Inverter (DDA-MLI).An 8-bit Xilinx SPARTAN 3AN field programmable gate array (FPGA) based digital controller is utilized for the simultaneous generation of high frequency switching pulses for DC-DC converter and synchronized fundamental frequency switching pulses for H-bridge. The desired number of levels in AC output voltage and its frequency are the essential inputs to the pulse generation algorithm implemented in FPGA. The proposed MLI is simulated in MATLAB/Simulink ® environment; its functioning is verified with resistive (R) and resistive-inductive (RL) loads. The hardware prototype of MLI is built in the laboratory and its performance is validated with R, RL loads and few home appliances. 0885-8993 (c)

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“…Impulsiniams magnetiniams laukams generuoti taip pat naudojami dujiniai pramuštuvai, kurie ypač vertinami dėl didelės srovės komutavimo galimybių. Bet atliekamame eksperimente šis kondensatoriaus iškrovos metodas dėl nevaldomo išlydžio yra netinkamas (Zorngiebel et al 2011).…”

Section: įVadasunclassified

High Magnetic Field Generator of Sub-Microsecond Duration / Mikrosekundinės Trukmės Magnetinių Impulsų Generatorius

Grainys

2012

Mokslas - Lietuvos Ateitis

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Vilniaus Gedimino technikos universitetasEl. paštas audrius.grainys@vgtu.lt santrauka. Nagrinėjamas mikrosekundinės ir submikrosekundinės trukmės magnetinių impulsų, siekiančių 1-10 T, generavimas. Pateikta mikrosekundės trukmės magnetinių impulsų generatoriaus, kuris susideda iš mikroritės, mažą parazitinį induktyvumą turinčio kondensatoriaus ir greitų didelės galios MOSFET raktų principinė valdymo schema. Pereinamiesiems srovės, įtampos, elektromagnetinio lauko ir termodinaminiams vyksmams gauti taikomi analizinis ir baigtinių elementų skaičiavimo metodai. Straipsnyje pateikti elektromagnetinio lauko pasiskirstymo skaičiavimo rezultatai.reikšminiai žodžiai: submikrosekundinis, baigtinių elementų metodas, magnetinis laukas, MOSFET, IGBT, kondensatorius, mikroritė.

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Modular 50-kV IGBT Switch for Pulsed-Power Applications

Cited by 21 publications

References 14 publications

Short-circuit Protection for the Series-Connected Switches in High Voltage Applications

Short-circuit Protection for the Series-Connected Switches in High Voltage Applications

Embedded Control of n-Level DC–DC–AC Inverter

High Magnetic Field Generator of Sub-Microsecond Duration / Mikrosekundinės Trukmės Magnetinių Impulsų Generatorius

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