Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content

Jones, Stephen H.; Tait, Gregory B.; Shur, M. S.

doi:10.1002/mop.4650050804

Cited by 11 publications

(5 citation statements)

References 6 publications

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“…In particular, Judaschke considers uniform doping, graded doping and notch doping (wherein a lightly doped region is incorporated adjacent to the cathode), and concludes that the latter is best of all for fundamental-mode operation. Further consideration is given to the so-called 'mesa' doping profile (following on from earlier work [10,11]), concluding that it is favourable for improving secondharmonic mode operation up to 260 GHz.…”

Section: Introductionmentioning

confidence: 99%

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Dunn¹,

Kearney²

2003

Semicond. Sci. Technol.

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InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.

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Section: Introductionmentioning

confidence: 99%

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Dunn¹,

Kearney²

2003

Semicond. Sci. Technol.

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“…[4] resulted in a wider width [3]. On the other hand, a doping mesa rather than a notch was suggested to enhance the harmonic content of the current waveform [5,6]. To elucidate this point, Fig.…”

Section: Structural Details and Resultsmentioning

confidence: 97%

Harmonic enhancement of Gunn oscillations in GaN

Sevik

Yilmaz²,

Bulutay

2005

AIP Conference Proceedings

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High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted. © 2005 American Institute of Physics

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“…2,3 An ever-present objective is to increase the operating frequency of the Gunn diodes, and a promising approach is to operate them at their higher harmonic modes rather than their fundamental mode. Recently, a number of researchers [4][5][6][7][8] focused on this point addressing the dependence of the higher harmonic efficiency on the doping profile mainly referring to the mature InP technology. The literature on GaN-based Gunn diodes has not yet flourished as the research community up until now mainly focused on the perfection of the material growth quality as well as laser and heterojunction bipolar transistor applications.…”

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confidence: 99%

“…14 On the other hand, a doping mesa rather than a notch was suggested to enhance the harmonic content of the current wave form. 4,6 To elucidate this point, Fig. 2(b) compares the performance of four configurations made from the combinations of notch/mesa placed next to cathode and in the middle of the active region.…”

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confidence: 99%

Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis

Sevik

Bulutay

2004

Applied Physics Letters

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Gallium nitride can offer a high-power alternative for millimeter-wave Gunn oscillators. Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of efficiency and harmonic enhancement in n-type GaN Gunn diodes is undertaken. First, the effects of doping notch/mesa and its position within the active channel are investigated which favors a doping notch positioned next to cathode. It is then observed that the width of the notch can be optimized to enhance the higher-harmonic operation without degrading its performance at the fundamental mode. Next, the effects of dc bias and channel doping density are investigated. Both of these have more significant effects on the higher-harmonic efficiency than the fundamental one. The lattice temperature is observed to have almost no influence up to room temperature but severely degrades the performance above room temperature. As a general behavior, the variations of temperature, channel doping, and the notch width primarily affect the phase angle between the current and voltage wave forms rather than the amplitude of oscillations. Finally, the physical origin of these Gunn oscillations is sought which clearly indicates that the intervalley scattering mechanism is responsible rather than the Γ valley nonparabolicity or the effective mass discrepancy between the Γ and the lowest satellite valleys. © 2004 American Institute of Physics

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Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content

Cited by 11 publications

References 6 publications

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Harmonic enhancement of Gunn oscillations in GaN

Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis

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