Modulation characteristics of uncooled graphene photodetectors

Abstract

We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electronhole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GLphotoresistor and the PGL-based barrier photodiodes) are compared. Their characteristics are also compared with the GL reverse-biased photodiodes. The obtained results allow to evaluate the ultimate modulation frequencies of these photodetectors and can be used for their optimization.