Modulation of a vertical-cavity surface-emitting laser using an intracavity quantum-well absorber

Lim, S.F.; Hudgings, Janice; Chen, L.P.; Li, G.S.; Yuen, W.; Lau, K.Y.; Chang-Hasnain, Connie J.

doi:10.1109/68.661396

Cited by 23 publications

(11 citation statements)

References 3 publications

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“…When the bias is applied to the modulator section the wavelength of the filter section mode is tuned, matching the VCSEL cavity mode. The approach is different form the case of coupled-cavity electroabsorption modulators, when the quantum-confined Stark effect results in increased absorption in the modulator section [63]. To ensure effective absorption, the absorbing medium has a large overlap with the optical field intensity.…”

Section: Electrooptically-modulated Vcselmentioning

confidence: 99%

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

et al. 2007

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Advanced types of QD media allow an ultrahigh modal gain, avoid temperature depletion and gain saturation effects, when used in high-speed quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs). An anti-guiding VCSEL design reduces gain depletion and radiative leakage, caused by parasitic whispering gallery VCSEL modes. Temperature robustness up to 100°C for 0.96-1.25 m range devices is realized in the continuous wave (cw) regime. An open eye 20 Gb/s operation with bit error rates better than 10-12 has been achieved in a temperature range 25-85°C without current adjustment. A different approach for ultrahigh-speed operation is based on a combination of the VCSEL section, operating in the CW mode with an additional section of the device, which is electrooptically modulated under a reverse bias. The tuning of a resonance wavelength of the second section, caused by the electrooptic effect, affects the transmission of the system. The second cavity mode, resonant to the VCSEL mode, or the stopband edge of the second Bragg reflector can be used for intensity modulation. The approach enables ultrahigh speed signal modulation. 60GHz electrical and 35GHz optical (limited by the photodetector response) bandwidths are realized

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Section: Electrooptically-modulated Vcselmentioning

confidence: 99%

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

et al. 2007

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“…The slow light devices discussed here include a SOA, an electroabsorption modulator, and a beam deflector having different functions. We propose the lateral optical coupling from a VCSEL to a slow light Bragg reflector waveguide, which is a different approach from the vertical coupling by stacking an optical device on a VCSEL reported so far [15][16][17]. The vertical emission of a VCSEL is inhibited by a top mirror whose reflectivity is nearly 100%.…”

Section: Structure and Modeling Of Lateral Integrationmentioning

confidence: 99%

“…The modulation bandwidth is primarily limited by a relaxation oscillation frequency and parasitic capacitance. To solve these issues of VCSELs, there have been reports on vertical integrations of a VCSEL and an amplifier/electroabsorption modulator [15][16][17]. However, there have been difficulties in their integration because their vertical integration causes the instability of coupled cavities due to strong optical feedback to a VCSEL.…”

Section: Introductionmentioning

confidence: 99%

Lateral integration of vertical-cavity surface-emitting laser and slow light Bragg reflector waveguide devices

2014

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We present the modeling and the experiment on the lateral integration of a vertical-cavity surface-emitting laser (VCSEL) and slow light Bragg reflector waveguide devices. The modeling shows an efficient direct-lateral coupling from a VCSEL to an integrated slow light waveguide. The calculated result shows a possibility of 13 dB chip gain and an extinction ratio over 5 dB for a compact slow light semiconductor optical amplifier (SOA) and electroabsorption modulator integrated with a VCSEL, respectively. We demonstrate an SOA-integrated VCSEL, exhibiting the maximum output power over 6 mW. Also, we fabricate a sub-50-μm long electroabsorption modulator laterally integrated with a VCSEL. An extinction ratio of over 15 dB for a voltage swing of 2.0 V is obtained without noticeable change of threshold. In addition, we demonstrate an on-chip electrothermal beam deflector integrated with a VCSEL.

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“…Integration of components on GaAs has lagged however, with the primary focus on arrays of identical devices such as VCSELs, although limited integration of components with different functions has been achieved [2][3]. To bring the advantages of photonic integrated circuits to short-wavelength applications, increased levels of integration on GaAs are needed.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional integration of VCSEL-based optoelectronics

Louderback¹,

Lin²,

Fish³

et al. 2005

SPIE Proceedings

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A monolithic optoelectronic device structure with the potential to enable VCSEL-based photonic integrated circuits on GaAs is presented. Using integrated diffraction gratings, the device structure enables the optical output of VCSELs to be coupled to an internal horizontal waveguide, while the optical signals in the waveguide are tapped off to resonant cavity detectors. Since horizontal waveguides are used to route the optical signals between devices, the output mirror transmission of the VCSELs can be eliminated, although we have chosen to retain a small amount of transmission in the top DBR to enable on-wafer testing. The design and fabrication of the monolithically integrated structure, including epitaxial regrowth, is discussed and initial device characteristics are presented.

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Modulation of a vertical-cavity surface-emitting laser using an intracavity quantum-well absorber

Cited by 23 publications

References 3 publications

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

Lateral integration of vertical-cavity surface-emitting laser and slow light Bragg reflector waveguide devices

Three-dimensional integration of VCSEL-based optoelectronics

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