Modulation of Bipolar Ultraviolet Current in TiO<sub>2</sub> Nanofilms for Switching Logic Devices via Ti Valence State Control

Lai, Li; Jin, Shuo; Hu, Haizheng; Wang, Shunli; Wu, Chao; Wu, Fengmin; Guo, Daoyou

doi:10.1021/acsanm.3c05015

Cited by 6 publications

(5 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The schematic depict of the PEC photodetector is shown in figure 5(a). Due to that the working electrodes are served as photoanodes, the positive shift of light current in in figure 5(b) means that photocurrent has been generated under 255 nm UV light illumination [34,35]. As shown in figure 5(a), a Schottky junction can be formed between Al doped α-GaOOH nanorod arrays and Na 2 SO 4 aqueous solution when Al doped α-GaOOH nanorod arrays are immersed into the electrolyte [34].…”

Section: Resultsmentioning

confidence: 99%

“…To investigate the photoelectric performances of Al doped α-GaOOH nanorod arrays, AGOOH1, AGOOH2, and AGOOH4 were put into 0.5 M Na 2 SO 4 aqueous solution to construct PEC photodetectors as photoanodes, where Pt foil and Ag/AgCl electrodes were served as counter electrodes and reference electrodes, respectively [34,35]. The schematic depict of the PEC photodetector is shown in figure 5(a).…”

Section: Resultsmentioning

confidence: 99%

“…Under illumination of solar-blind UV light on the Al doped α-GaOOH nanorod arrays, photogenerated electron-hole pairs are produced in the depletion region. Under the drive of builtin electric field in Al doped α-GaOOH nanorod arrays, photogenerated electrons are collected by FTO, while photogenerated holes move towards Na 2 SO 4 aqueous solution [34,35]. Thus, photocurrent can be detected and recorded by the electrochemical workstation.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Zheng,

Fan

2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Al doped α-GaOOH nanorod arrays were grown on FTO via hydrothermal processes by using gallium nitrate and aluminium nitrate mixed aqueous solutions with fixed 1:1 mole ratio as precursors. With increasing the gallium nitrate precursor concentrations, the Ga/Al atom ratio in nanorod arrays increase from 0.36 to 2.08, and the length becomes much longer from 650 nm to 1.04 μm. According to the binding energy difference between Ga 2p3/2 core level and its background in XPS, the bandgap is estimated to be around 5.3±0.2 eV. Al doped α-GaOOH nanorod array/FTO photoelectrochemical (PEC) photodetectors shows enhanced self-powered solar-blind UV photodetection properties, with the decrease of Ga precursor concentrations. The maximum responsivity at 255 nm is 0.09 mA/W, and the fastest response time can reach 0.05s. The improved photoresponse speed is ascribed from much shorter transportation route, accelerated carrier recombination by recombination centers, and smaller charge transfer resistance at the α-GaOOH/electrolyte interface with decreasing the gallium nitrate precursor concentrations. The stability and responsivity should be further improved. Nevertheless, this work firstly demonstrates the realization of self-powered solar-blind UV photodetection for α-GaOOH nanorod arrays on FTO via Al doping.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Zheng,

Fan

2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Photosensitive materials with strong optical absorption across a wide spectral range are required by the broadband PDs . However, a unitary material, like GaN, Si, and InGaAs, often reacts to a specific wavelength or short wavelength of light. , Constructing bulk heterojunctions provides a relatively simple approach to explore PDs with broad spectral response, which consists of two or more spectrally complementary and energy-level-matched photosensitive materials. , Furthermore, this approach is conducive to exerting the synergistic coupling enhancement effect of cosensitization between materials, leading to the prepared photosensitive materials with efficient photoelectric response in the broadband region.…”

Section: Introductionmentioning

confidence: 99%

Y-Type Titanyl Phthalocyanine Nanoparticle and Hollow ZnS Nanotube Heterojunctions with Cavity Enhancement Effect for UV–Vis–NIR Photodetectors

Li,

Tang,

Wan

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

UV−vis−NIR photodetectors are of great importance to extensive applications, while they are limited by the low photon utilization and narrow light response range inherent in a single material. To overcome these limitations, we propose the construction of heterojunction photosensitive materials featuring a hollow structure. In this study, Y-type titanylphthalocyanine nanoparticles (Y-TiOPc NPs) and hollow ZnS nanotubes (ZnS NTs) are employed to fabricate a bulk heterojunction photosensitive material (Y-TiOPc NPs:ZnS NTs). This composite material exhibits a significant cavity enhancement effect, resulting from multiple light reflections and outstanding light absorption spanning from 365 to 1060 nm. The photodetector based on Y-TiOPc NPs:ZnS NTs (referred to as Y:ZT-PD) demonstrates remarkable photodetection capabilities, including photomultiplication phenomena. Specifically, it achieves a high external quantum efficiency of 24042%, an impressive photoresponsivity (R) of 101967 mA/W, and an excellent specific detectivity (D*) of 1.56 × 10 12 Jones at 0.01 mW/cm 2 . Additionally, the multiperiod time-resolved photocurrent response curves exhibit rapid and stable responses across different wavelengths. Characterization results indicate that these exceptional performances primarily arise from the cavity enhancement effect of ZnS NTs and the hole-injection effect resulting from interfacial trapped electrons. Consequently, the outstanding performance, coupled with the broad spectral range and stability, positions the hollow bulk heterojunction as a promising material for the next generation of broadband photodetectors.

show abstract

“…Consequently, they offer a platform for finely tuning surface potential, which holds promise for facilitating self-driven bidirectional photodetection. Further, bidirectional I ph optoelectronic devices are emerging for neuromorphic computing and optically controlled logic gates. − However, a compact study starting from GaN growth to achieve bidirectional photocurrent PD and using this photonics device in the logic gates is still a field to explore.…”

Section: Introductionmentioning

confidence: 99%

A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network

Vashishtha,

Jain,

Prajapat

et al. 2024

ACS Appl. Opt. Mater.

View full text Add to dashboard Cite

This Communication has reported a GaN-nanowall-network-based bidirectional photocurrent self-driven photodetector. The device leverages the unique properties of gallium nitride nanowall networks to modulate surface potentials, enabling bidirectional photocurrent generation and a self-driven nature. The detector enables a negative photocurrent under 266 nm illumination, while a positive photocurrent is obtained with a 355 nm source at 0 V applied bias. Peak responsivities of −2.5 and 1.7 A W −1 have been attained for the illumination wavelengths of 266 and 355 nm, respectively, under self-driven mode. Distinct logic states were realized by selectively illuminating the device with different wavelengths. The device operates as self-driven logic gates with output states defined relative to a fiducial zero point. The photocurrent direction and magnitude are also adjustable by varying the optical power intensity. Our findings demonstrate the potential of GaN-nanowall networks for realizing versatile, futuristic multifunction ultraviolet self-driven photonic devices.

show abstract

Modulation of Bipolar Ultraviolet Current in TiO₂ Nanofilms for Switching Logic Devices via Ti Valence State Control

Cited by 6 publications

References 47 publications

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Y-Type Titanyl Phthalocyanine Nanoparticle and Hollow ZnS Nanotube Heterojunctions with Cavity Enhancement Effect for UV–Vis–NIR Photodetectors

A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network

Contact Info

Product

Resources

About

Modulation of Bipolar Ultraviolet Current in TiO2 Nanofilms for Switching Logic Devices via Ti Valence State Control

Cited by 6 publications

References 47 publications

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors

Y-Type Titanyl Phthalocyanine Nanoparticle and Hollow ZnS Nanotube Heterojunctions with Cavity Enhancement Effect for UV–Vis–NIR Photodetectors

A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network

Contact Info

Product

Resources

About

Modulation of Bipolar Ultraviolet Current in TiO₂ Nanofilms for Switching Logic Devices via Ti Valence State Control