Modulation of electronic and optical properties of GaTe monolayer by biaxial strain and electric field

Novel wide spectrum light absorber heterostructures based on hBN/In(Ga)Te

“…From our calculations, both InTe and GaTe monolayers have an indirect bandgap of E g = 1.38 eV and E g = 1.75 eV respectively, while hBN has a large direct bandgap of 4.63 eV. These results are in agreement with previous theoretical results obtained using the PBE functional [32,33,20,36]. As the PBE functional underestimates the band gap in semiconductors, hybrid functionals such is HSE must be used in order to obtain an accurate electronic properties.…”

“…Both GaTe (InTe) and hBN have hexagonal lattice with D 1 3h symmetry. Lattice constants obtained after the geometric optimizations of a = 4.37 Å for InTe, a = 4.05 Å for GaTe and 2.51 Å for hBN are in agreement with previous reports [21,36,33,47].…”

“…Both are indirect band gap semiconductors with band gaps of 1.29 eV and 1.75 eV, respectively. In addition to good electrical and optical properties [32,33,34,35,36], those materials also excel in elastic properties, being able to sustain considerable values of both tensile and compressive strain [32,37,36], which showed as very effective and convenient way to precisely tune electrical and optical properties of 2D materials [38,39,40]. Suitable for various applications in novel electronic and optoelectronic devices, research of heterostructures based on those materials is very attractive, expecting to achieve some new effects or to tune and enhance desired properties of the 2D structures alone.…”

Strain- and electric field-enhanced optical properties of the penta-siligraphene monolayer

“…Besides biaxial strain, the electric field is also one of the methods that can tune the electronic properties of 2D materials. [56][57][58] In this regard, we have studied the external electric field effect on the electronic properties of the PSG monolayer. We considered the case where the direction of application of E is perpendicular to the surface of p-Si 2 C 4 (along the z-axis) with a magnitude from À5 to +5 V nm À1 .…”

Janus structures of the C2h polymorph of gallium monochalcogenides: first-principles examination of Ga2XY (X/Y = S, Se, Te) monolayers

“…3 Physical properties of group III monochalcogenide compounds MX (M = Ga, In; X = S, Se, Te) have been systematically studied recently. [4][5][6] It has been shown that this class of materials has outstanding physical properties and diverse applications in the elds of nanooptoelectronics such as nanophotodetectors, eld-effect transistors and so on.…”