Modulation of thermoelectric properties of thermally evaporated copper nitride thin films by optimizing the growth parameters

Tanveer, Z.; Mahmood, K.; Ikram, Salma; Ali, Adnan; Amin, Nasir

doi:10.1016/j.physb.2020.412712

Cited by 11 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Plasma-assisted pulsed laser deposition Zn3N2 [402] HfN [404] Plasma-enhanced atomic layer deposition Mo2N [419] NbN [421,422] TaN [423] Plasma-enhanced chemical vapor deposition AlN [183,184] Pulsed laser deposition Zn3N2 [401] TiN [403] NbN [405] Cu3N [406] AlN [188,190] Zn3N2 [370][371][372][373][374][375] CrN [377] CoN (Co target) [493] HfN [494] Hf3N4 [494,495] RF reactive magnetron sputtering HfN (HfN target) [367][368][369] ZnN (ZnN target) [366] TiN (Ti target) [376] AuN2 (Au target) [378] Zr3N4 [379] Co3N [380] Room temperature ion beam assisted sputtering NbN [496] Thermal decomposition Ca2N [497] Thermal evaporation Zn3N2 [398,399] Cu3N [400] Topochemical nitridation of TMD by NH3 at high temperature Mo2N [438] MoN [435,438] The common methods for synthesizing MNs thin films include radio frequency (RF) magnetron sputtering [366][367]…”

Section: Synthetic Routes Corresponding 2d Mnsmentioning

confidence: 99%

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

et al. 2022

View full text Add to dashboard Cite

The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group IIIA nitrides, nitride MXene and other transition metal nitrides, exhibit unique electronic and magnetic characteristics. The 2D MNs have been widely studied by experimental and computational approaches and some of them have been synthesized. Herein we systematically reviewed the structural, electronic, thermal, mechanical, magnetic and optical properties of the 2D MNs that have been reported in recent years. Based on their unique properties, the related applications of 2D MNs on fields like electronics, spintronics, sensing, catalysis, and energy storage were discusszed. Additionally, the lattice structures and synthetic routes were also summarized as supplements of the research progress of 2D MNs family. Furthermore, we provided insights into the research prospects and future efforts that need to be made on 2D MNs.

show abstract

Section: Synthetic Routes Corresponding 2d Mnsmentioning

confidence: 99%

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

et al. 2022

View full text Add to dashboard Cite

show abstract

“…To form an ideal p-n junction with CZTS, an appropriate thickness of MoSe 2 is needed so that it could give good quantified optical, morphological and electrical properties. It is because thick layer could hinder the transmission of photons and too thin layer could cause shorting due to pinholes in film [12,13] . In current work, MoSe 2 coated CZTS diode thin films were grown as layer by layer by sol-gel followed by spin coating and thermal evaporation route.…”

Section: Introductionmentioning

confidence: 99%

Study of Electrical Transport Properties of CZTS/MoSe2/glass Heterostructures

Zhang,

Ikram,

Ali

et al. 2024

J Mod Green Energy

View full text Add to dashboard Cite

Objective: In this manuscript, we have investigated the temperature dependent electrical transport properties of CZTS/MoSe2/glass heterostructures for solar cell applications. Methods: MoSe2 coated CZTS diode thin films were fabricated using sol-gel and thermal evaporation methods. During first step, CZTS thin films were grown on glass substrate by sol-gel process and in the 2nd step, MoSe2 thin films were grown on CZTS/glass using thermal evaporation method. The grown structures were post growth annealed at 450-500℃ using a muffle furnace. Results: The structure of each layer was verified by XRD and Raman spectroscopy. SEM analysis has confirmed the smooth surface formation of thin films with a uniform distribution of grains. Electrical properties have been studied by two probe technique after the junction formation between CZTS and MoSe2. Transport properties of the junction showed its semiconductor nature. The resistivity varies from 0 to 7×109ohm-cm for the sample annealed at 450℃ and varies 0 to 3×1010ohm-cm for the sample annealed at 500℃. Conclusion: All these parameters made synthesized thin films promising candidates for higher efficiency solar cells, radio modulation and power conversion applications. The effect of the MoSe2 layer on the microstructure and performance of the CZTS film is discussed here in detail. These results serve as guiding principles for preparing high-quality CZTS thin films for potential applications in low-cost solar cells.

show abstract

“…To switch between these electric characters, doping concentration, synthesis conditions, surface modifications, and interface engineering can be adjusted to alter charge carriers, crystal structure, defect density, and electrical properties. By controlling these factors, copper nitride's resistivity can be fine tuned to achieve the desired conductivity [7][8][9]. This approach can potentially enhance and broaden the scope of applications for Cu3N films.…”

Section: Introductionmentioning

confidence: 99%

Copper Nitride: A Versatile Semiconductor with Great Potential for Next-Generation Photovoltaics

et al. 2023

View full text Add to dashboard Cite

Copper nitride (Cu3N) has gained significant attention recently due to its potential in several scientific and technological applications. This study focuses on using Cu3N as a solar absorber in photovoltaic technology. Cu3N thin films were deposited on glass substrates and silicon wafers via radio-frequency magnetron sputtering at different nitrogen flow ratios with total pressures ranging from 1.0 to 5.0 Pa. The thin films’ structural, morphology, and chemical properties were determined using XRD, Raman, AFM, and SEM/EDS techniques. The results revealed that the Cu3N films exhibited a polycrystalline structure, with the preferred orientation varying from 100 to 111 depending on the working pressure employed. Raman spectroscopy confirmed the presence of Cu-N bonds in characteristic peaks observed in the 618–627 cm−1 range, while SEM and AFM images confirmed the presence of uniform and smooth surface morphologies. The optical properties of the films were investigated using UV-VIS-NIR spectroscopy and photothermal deflection spectroscopy (PDS). The obtained band gap, refractive index, and Urbach energy values demonstrated promising optical properties for Cu3N films, indicating their potential as solar absorbers in photovoltaic technology. This study highlights the favourable properties of Cu3N films deposited using the RF sputtering method, paving the way for their implementation in thin-film photovoltaic technologies. These findings contribute to the progress and optimisation of Cu3N-based materials for efficient solar energy conversion.

show abstract

Modulation of thermoelectric properties of thermally evaporated copper nitride thin films by optimizing the growth parameters

Cited by 11 publications

References 18 publications

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

Study of Electrical Transport Properties of CZTS/MoSe2/glass Heterostructures

Copper Nitride: A Versatile Semiconductor with Great Potential for Next-Generation Photovoltaics

Contact Info

Product

Resources

About