Graphene and related
materials can lead to disruptive advances
in next-generation photonics and optoelectronics. The challenge is
to devise growth, transfer and fabrication protocols providing high
(≥5000 cm
2
V
–1
s
–1
) mobility devices with reliable performance at the wafer scale.
Here, we present a flow for the integration of graphene in photonics
circuits. This relies on chemical vapor deposition (CVD) of single
layer graphene (SLG) matrices comprising up to ∼12000 individual
single crystals, grown to match the geometrical configuration of the
devices in the photonic circuit. This is followed by a transfer approach
which guarantees coverage over ∼80% of the device area, and
integrity for up to 150 mm wafers, with room temperature mobility
∼5000 cm
2
V
–1
s
–1
. We use this process flow to demonstrate double SLG electro-absorption
modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1
dB V
–1
for device lengths ∼30, 60, 90, 120
μm. The data rate is up to 20 Gbps. Encapsulation with single-layer
hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced
CVD of Si
3
N
4
, ensuring reproducible device performance.
The processes are compatible with full automation. This paves the
way for large scale production of graphene-based photonic devices.