Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation

Abstract

After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on SiC-MOSFETs during ANPC commutation is analyzed. Finally, a short-loop commutation modulation strategy is proposed under the full working conditions of ANPC. The modulation strategy considers the influence of modulation carriers selection and dead time on ANPC commutation and optimizes the ANPC commutation loop to suppress the overvoltage on SiC-MOSFETs during ANPC commutation.