2022
DOI: 10.48550/arxiv.2201.10877
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Moiré-Bose-Hubbard model for interlayer excitons in twisted transition metal dichalcogenide heterostructures

N. Götting,
F. Lohof,
C. Gies

Abstract: In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such structures, correlated states can emerge, in which excitons in the heterostructure are strongly localized to the potential minima due to exciton-exciton interactions. We explore the transition between Mott and extended exciton phases in terms of a moiré-Bose-Hubbard Hamiltonian. H… Show more

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Cited by 2 publications
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“…The moiré periodicity and the Coulomb repulsion can lead to the localization of an exciton in each moiré unit cell. Such an effect on the exciton condensate can be described by the moiré Bose-Hubbard (BH) Hamiltonian [54,55],…”
Section: (B)) ε Ementioning
confidence: 99%
“…The moiré periodicity and the Coulomb repulsion can lead to the localization of an exciton in each moiré unit cell. Such an effect on the exciton condensate can be described by the moiré Bose-Hubbard (BH) Hamiltonian [54,55],…”
Section: (B)) ε Ementioning
confidence: 99%
“…In semiconductor bilayers, moiré materials have unveiled a new class of excitations [12][13][14][15][16]: moiré excitons. Moiré excitons possess properties that make them ideal to explore strongly interacting phases of bosonic matter in uncharted territory, which include prospects for high-temperature and long-lived Bose-Einstein condensates [17,18], the superfluid-Mott transition [19], excitonic insulators [20], and supersolidity [21].…”
Section: Introductionmentioning
confidence: 99%