Molded reliability study for different Cu wire bonding configurations

Qin, Ivy; Xu, Huining; Milton, Basil; Clauberg, Horst; Chylak, Bob; Abe, Hideaki; Kang, Dongchul; Endo, Yoshinori; Osaka, Masahiko; Nakamura, Shinya

doi:10.1109/ectc.2013.6575783

Cited by 13 publications

(2 citation statements)

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“…In addition, electronic flame off (EFO) current has a strong influence on Pd distribution in the FAB [ 117 ], which has an effect on Cu–Al IMCs growth and thus affects bond strength and reliability [ 111 ]. Other literature also reported that the PCC wire improves bonding reliability under high temperature and high humidity and stressed environment due to the adjustment of controls for Cu-Al interdiffusion and specific IMCs formation [ 66 , 118 , 119 ].…”

Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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show abstract

“…In addition, electronic flame off (EFO) current has a strong influence on Pd distribution in the FAB [117], which has an effect on Cu-Al IMCs growth and thus affects bond strength and reliability [111]. Other literature also reported that the PCC wire improves bonding reliability under high temperature and high humidity and stressed environment due to the adjustment of controls for Cu-Al interdiffusion and specific IMCs formation [66,118,119]. The bonding wire used in the automotive industry is expected to change from Au wire to Cu wire in the coming years [120], and the AEC have published a new document which specifies the minimum requirements for qualification of Cu wire interconnections used in automotive electronics applications [121].…”

Section: Reliability Of Cu Bonding Wirementioning

confidence: 99%