Molecular-beam-epitaxial growth and optical analysis of InAs/AlSb strained-layer superlattices

Yano, Mitsuaki; Okuizumi, Masaru; Iwai, Yoshio; Inoue, M.

doi:10.1063/1.354970

Cited by 26 publications

(3 citation statements)

References 23 publications

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“…Merlin [88] has reviewed the Raman studies of strained and unstrained InGaAs. Other useful references on Raman studies of stress and strain are [100,101,135,143,145].…”

Section: Theorymentioning

confidence: 99%

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Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Jain

Willander

Maes

1996

Semicond. Sci. Technol.

191

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Stresses and strains in heterostructures have dominated semiconductor research during the last ten years. We review the theory and experimental work on stresses in III-V semiconductor heterostructures in this paper. First large-area lattice mismatched layers (InGaAs and InGaP layers grown on GaAs or InP substrates) and thermally strained layers (GaAs, GaP and InP layers grown directly on Si) are considered. The stresses in large-area epilayer-substrate structures are easy to model because substrate distortion can be neglected and strain in the epilayer is a simple biaxial tetragonal distortion. Calculated splitting of band edges, modification of bandgaps and shifts of Raman modes show good agreement with experiments. Edges of a stripe relax stress in the stripes and induce stress in the substrate. Since stresses in the stripe and the substrate are coupled, calculation of stresses in stripes and substrates is more involved. Recent finite element (FE) calculations of these stresses are discussed in detail and compared with the approximate analytical models and with luminescence and Raman measurements. FE calculations of stresses in buried quantum wires, stressor-induced quantum wires and quantum dots are also discussed. The results of these calculations are used to determine stability and luminescence of the quantum wires and dots and compared with the experimental results. Finally self-organized quantum dots consisting of islands formed during the 3D growth of InAs layers on GaAs are discussed. A possible explanation of the recent observation that they are formed in vertical columns embedded in GaAs is suggested.

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“…Merlin [88] has reviewed the Raman studies of strained and unstrained InGaAs. Other useful references on Raman studies of stress and strain are [100,101,135,143,145].…”

Section: Theorymentioning

confidence: 99%

“…GaAs layers on CaF 2 have been studied by Puech et al [100,101]. Yano et al [143] have studied InAs/AlSb layers. Attolini et al have studied GaAs/InP [13].…”

Section: Introductionmentioning

confidence: 99%

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Jain

Willander

Maes

1996

Semicond. Sci. Technol.

191

View full text Add to dashboard Cite

show abstract

“…During the last decade, many studies have been carried out on the growth, interface properties, and electrical and optical properties of the InAs/AlSb structures [2,[9][10][11][12][13][14]. The thermal conductivity of InAs/AlSb superlattices is of considerable interest for the thermal management of mid-IR lasers, which are severely limited by the temperature rise in the active region [7,8].…”

mentioning

confidence: 99%