Molecular-beam epitaxial growth and surface characterization of GaAs(311)B

Abstract

Reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) are used to study the surface and growth of GaAs (311)B. The RHEED pattern reveals a lateral periodicity of 3.2 nm along the [011̄] direction, which is confirmed in real space by STM images. Pronounced RHEED intensity oscillations during the homoepitaxial growth on GaAs(311)B were observed in a wide substrate temperature range.

In-plane photocurrent of self-assembledInxGa1−xAs

“…Considering the possible anisotropy on the GaAs ͑311͒ surface, such as the 1D corrugation structure along the ͓2 33͔ direction reported previously, 19,20 we compared the photocurrent along the ͓011 ͔ direction and two diagonal directions with respect to ͓2 33͔ and ͓011 ͔. Under our experimental condition, the current difference between these directions is less than 10%, which we can not exclusively ascribe to the microstructural anisotropy of the GaAs (311)B surface.…”

“…This is probably because the roughness or fluctuation due to the QD distribution, which shows no meaningful anisotropy in our present samples, is larger than that due to the atomically scaled 1D corrugation structure on the ͑311͒ surface. 19,20 In addition, the photocurrent in the case of single-color irradiation shows no NDC behavior until the irradiation intensity is higher than 60 mW cm Ϫ2 . The observable NDC feature is much weaker than that for low-pass-filtered irradiation with the same intensity.…”

RHEED study of GaAs(331)B surface

“…4(a) shows a stable RHEED oscillation at different substrate temperatures. Similar to the (1 0 0) surface [18], the oscillation on (3 3 1)B is independent of substrate temperature in a wide range. Fig.…”

Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy

“…Most researches concerning this system involve materials grown on (0 0 1)-oriented substrates. However, materials grown on high-index substrates also offers potential advantages, the most significant is the increased critical layer thickness with respect to (0 0 1) orientation [22,23]. Many interesting results have been achieved on QDs grown on high-index substrates.…”