Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In-Ga oven

Abstract

Epitaxial layers of In0.53Ga0.47As lattice matched to InP substrates have been grown by molecular beam epitaxy. The (100) InP substrate surfaces were first oxide passivated and then thermally cleaned under 1.5×10−6 Torr of arsenic moleuclar beam exposure (i.e., 1.24×1014 As4/cm2 sec). When they were heated to 500 °C, damage-free surfaces without oxygen and carbon contamination were obtained. The surface chemical composition as a function of the thermal cleaning temperature was studied with Auger electron spectroscopy. In0.53Ga0.47As epilayers of highly uniform composition were grown over a 7-cm2 InP substrate using an In/Ga coaxial oven design. Reproducible In and Ga beam fluxes to obtain lattice-match condition were achieved by adjusting the aperture ratio of the In and Ga reservoirs, and the oven temperature. Net electron concentration as low as 3×1015 cm−3 has been achieved for the In0.53Ga0.47As layers.

Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

“…High and low-temperature growth conditions were based on the established procedures. 8,9 Similar to the growth of (Ga,Mn)As, 4 we found that the optimum T s for LT-growth of ferromagnetic (In,Ga,Mn) The data show that the remanent magnetization can be observed up to at least 100 K. At about 120 K, the remanent component ceases to exist, indicating the disappearance of ferromagnetic order. One may notice that even above the Curie temperature the Hall resistance curves still show strong nonlinear behavior, and e.g., the sign of the Hall coefficient changes from positive to negative at around 200 K. This complicated transport behavior is probably due to the spinrelated scattering that takes place even at room temperature for such a high Mn composition.…”

Properties of a high‐mobility two‐dimensional electron gas in modulation‐doped quantum well structures of GaInAs/AIInAs and GaInAs/(Ga1−xAlx)InAs heterostructures

“…The substrates were introduced into the MBE system being soldered with indium to Mo blocks or mounted In free. The MBE growth of the modulation-doped samples was initiated after desorption of the oxide layer at 480 "C [6] and a rapid heating of the substrate up to 520 "C under a stabilizing arsenic flux. The desorption process as well as the first stages of growth were controlled by means of a RHEED pattern according to [6].…”

“…The MBE growth of the modulation-doped samples was initiated after desorption of the oxide layer at 480 "C [6] and a rapid heating of the substrate up to 520 "C under a stabilizing arsenic flux. The desorption process as well as the first stages of growth were controlled by means of a RHEED pattern according to [6]. To improve the in-situ thermal cleaning process the substrate temperature was maintained at 500 "C for a prolonged period of 30 min before commencing the growth [7].…”

“…The application of a magnetic field perpendicular to the interface causes on additional quantization: the system becomes fully quantized with energy levels given by E i , n , 5 = Ej + (?I 4-4) h a , + sgpL,B, (6) where E , is the bottom of the i-th subband caused by the electric quantization, the second and third terms are the magnetic field dependent Landau levels and spin splitting respectively; o, = eB/m* is the cyclotron frequency, s = f 1/2 the spin quantum number, g the Lande factor, and pB the Bohr magneton.…”

Principles of Molecular Beam Epitaxy

“…Other techniques that have been used to great effect include spectral ellipsometry for the determination of thicknesses and optical constants [41,42], auger electron spectroscopy for chemical analysis [43,44], band-edge thermometry for measuring substrate temperature [45], and scanning tunneling microscopy for the atomic-level measurement of surfaces [46], among many others. Many MBE systems also have more specialized analysis equipment for the study of growth kinetics and material quality.…”