Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate

Tsai, Chiun-Lung; Kobayashi, Yoshihiro; Akasaka, Tetsuya; Kasu, Makoto

doi:10.1016/j.jcrysgro.2009.01.077

Cited by 37 publications

(18 citation statements)

References 13 publications

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“…The growth of h -BN films was carried out by applying molecular beam epitaxy (MBE, Riber SIVA 45 setup) on a Ni(111) surface. The growth recipe was combined out of two growth approaches described elsewhere 33 51 . A single crystalline Ni(111) was used as a substrate.…”

Section: Methodsmentioning

confidence: 99%

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

Tonkikh

Voloshina

Werner

et al. 2016

Sci Rep

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Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.

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Section: Methodsmentioning

confidence: 99%

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

Tonkikh

Voloshina

Werner

et al. 2016

Sci Rep

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“…[2][3][4][5][6][7] Recently, there have been many attempts to develop a reproducible technology for the growth of large area boron nitride layers by chemical vapor deposition, [19][20][21] metalorganic chemical vapor deposition 8,9,22 and molecular beam epitaxy (MBE). [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] Progress in MBE growth of boron nitride layers has been relatively slow, partly due to a lack of an efficient MBE source for boron, due to its very low vapor pressure.…”

Section: Introductionmentioning

confidence: 99%

High-temperature molecular beam epitaxy of hexagonal boron nitride layers

Cheng¹,

Summerfield²,

Mellor³

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick two dimensional (2D)-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) applications. The authors present their results in the high-temperature plasma-assisted molecular beam epitaxy (PA-MBE) of hBN monolayers on highly oriented pyrolytic graphite substrates. Their results demonstrate that PA-MBE growth at temperatures ∼1390 °C can achieve mono- and few-layer thick hBN with a control of the hBN coverage and atomically flat hBN surfaces which is essential for 2D applications of hBN layers. The hBN monolayer coverage can be reproducible controlled by the PA-MBE growth temperature, time and B:N flux ratios. Significantly thicker hBN layers have been achieved at higher B:N flux ratios. The authors observed a gradual increase of the hBN thickness from 40 to 70 nm by decreasing the growth temperature from 1390 to 1080 °C. However, by decreasing the MBE growth temperature below 1250 °C, the authors observe a rapid degradation of the optical properties of hBN layers. Therefore, high-temperature PA-MBE, above 1250 °C, is a viable approach for the growth of high-quality hBN layers for 2D and DUV applications.

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“…3,13 Highly oriented polycrystalline h-BN bulk samples are also obtained by compressionannealed pyrolysis. 14 Furthermore, CVD [15][16][17][18][19][20] and PVD 10,15,[21][22][23][24][25][26] techniques have been extensively employed to grow h-BN thin films with different degrees of structural disorder. With the advent of nanotechnology, a number of BN nanostructures such as nanotubes, nanoribbons or fullerenes have been successfully produced by chemical or physical methods.…”

Section: Introductionmentioning

confidence: 99%

Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure

Caretti

Jiménez

2011

Journal of Applied Physics

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The generation of point defects in highly oriented pyrolytic boron nitride (HOPBN) after Ar þ ion bombardment in ultrahigh vacuum and subsequent exposure to air was studied by angle-resolved x-ray absorption near edge structure (XANES). The pristine HOPBN showed well-oriented boron nitride (BN) basal planes parallel to the surface, with a negligible amount of defects. Amorphization of the BN structure took place after Ar þ sputtering, as indicated by the broadening of the XANES spectra and significant decrease of the characteristic p* states. Following air exposure, the XANES analysis revealed a spontaneous reorganization of the sample structure. The appearance of four new B1s p* excitonic peaks indicates an oxygen decoration process of the nitrogen vacancies created by ion bombardment. A core-level shift model is presented to support this statement. This model is successfully extended to the case of oxygen substitutional defects in hexagonal BC 3 and BC x N (0 < x < 4) materials, which can be applied to any B-based sp 2 -bonded honeycomb structure.

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Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate

Cited by 37 publications

References 13 publications

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

High-temperature molecular beam epitaxy of hexagonal boron nitride layers

Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure

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